NTQD6968NR2 ,Power MOSFET 7.0 A, 20 V Common Drain, Dual N-Channel, TSSOP-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTQD6968R2 ,Power MOSFET 6.6 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTQS6463 ,Power MOSFET 6.2 Amps, 20 Volts3R , DRAIN−TO−SOURCE RESISTANCE () −I , DRAIN CURRENT (A)R , DRAIN−TO−SOURCEDS(on) DS(on) DRESISTA ..
NTR0202PL ,Power MOSFET 400 mA 20 V P-Channel SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR0202PLT1 ,Power MOSFET 400 mA 20 V P-Channel SOT-232NTR0202PL0.75 1V ≥ −10 VDSV = −10 VGST = 25°CJ−6 V0.75−4 V−5.5 VT = 125°CJ0.5−5 V0.5−3.5 VT = 25°C ..
NTR0202PLT1 ,Power MOSFET 400 mA 20 V P-Channel SOT-23MAXIMUM RATINGS (T = 25°C unless otherwise noted)JSRating Symbol Value UnitDrain−to−Source Voltage ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTQD6968NR2
Power MOSFET 7.0 A, 20 V Common Drain, Dual N-Channel, TSSOP-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 20 − −GS D− 16 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Collector Current I AdcDSS(V = 16 Vdc, V = 0 Vdc, T = 25°C) − − 1.0DS GS J(V = 16 Vdc, V = 0 Vdc, T = 125°C) − − 10DS GS JGate−Body Leakage Current I nAdcGSS(V = ±12 Vdc, V = 0 Vdc) − − ±100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = 250 Adc) 0.6 0.75 1.2DS GS D− 3.0 − mV/°CTemperature Coefficient (Negative)Static Drain−to−Source On−State Resistance R DS(on)(V = 4.5 Vdc, I = 7.0 Adc) − 0.017 0.022GS D(V = 2.5 Vdc, I = 7.0 Adc) − 0.022 0.030GS D(V = 2.5 Vdc, I = 3.5 Adc) − 0.022 0.030GS DForward Transconductance (V = 10 Vdc, I = 7.0 Adc) g − 19.2 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 630 − pFiss(V = 16 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 260 −ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 95 −rssSWITCHING CHARACTERISTICS (Notes 4 and 5)Turn−On Delay Time t − 8.0 − nsd(on)Rise Time t − 25 −r(V (V = 16 = 16 Vdc, I Vdc, I = 7.0 Adc, = 7.0 Adc,DD DD D DV = 4.5 Vdc, R = 6.0 )GS GTurn−Off Delay Time t − 60 −d(off)Fall Time t − 65 −fGate Charge Q − 12.5 17 nCtot(V (V = =1 16 6 Vd Vdc c,DS DSV = 4.5 Vdc, Q − 1.0 −GS GS gsII = 7.0 Adc) 7 0 Adc)DQ − 5.0 −gdBODY−DRAIN DIODE RATINGS (Note 4)Forward On−Voltage (I = 7.0 Adc, V = 0 Vdc) V − 0.82 1.2 VdcS GS SDReverse Recovery Time t − 35 − nsrr(I = 7.0 Adc, V = 0 Vdc,S GSt − 15 −adI dI /dt = 100 A/ /dt = 100 A/s s) )S St − 20 −bReverse Recovery Stored Charge Q − 0.02 − CRR4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.5. Switching characteristics are independent of operating junction temperature.
