NTP75N06L ,Power MOSFET 75 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP85N03 ,Power MOSFET 85 Amps, 28 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP90N02 ,Power MOSFET 90 Amps / 24 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTQD6866R2 ,Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8MAXIMUM RATINGS (T = 25°C unless otherwise noted)G1 G2CRating Symbol Value UnitS1 S2Drain–to–Source ..
NTQD6968NR2 ,Power MOSFET 7.0 A, 20 V Common Drain, Dual N-Channel, TSSOP-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTQD6968R2 ,Power MOSFET 6.6 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTP75N06L
Power MOSFET 75 Amps, 60 Volts, Logic Level
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage (Note 2.) V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 60 72 –GS DTemperature Coefficient (Positive) – 74 – mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = 60 Vdc, V = 0 Vdc) – – 10DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) – – 100DS GS JGate–Body Leakage Current (V = ±15 Vdc, V = 0 Vdc) I – – ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 2.)Gate Threshold Voltage (Note 2.) V VdcGS(th)(V = V , I = 250 μAdc) 1.0 1.58 2.0DS GS DThreshold Temperature Coefficient (Negative) – 6.0 – mV/°CStatic Drain–to–Source On–Resistance (Note 2.) R mOhmDS(on)(V = 5.0 Vdc, I = 37.5 Adc) – 9.0 11GS DStatic Drain–to–Source On–Voltage (Note 2.) V VdcDS(on)(V = 5.0 Vdc, I = 75 Adc) – 0.75 0.99GS D(V = 5.0 Vdc, I = 37.5 Adc, T = 150°C) – 0.61 –GS D JForward Transconductance (Note 2.) (V = 15 Vdc, I = 37.5 Adc) g – 55 – mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C – 3122 4370 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0 VdDS GSOutput CapacitanceC – 1029 1440ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C – 276 390rssSWITCHING CHARACTERISTICS (Note 3.)Turn–On Delay Time t – 22 32 nsd(on)Rise Time t – 265 370r(V (V = 30 Vdc, I 30 Vdc, I = 75 Adc, 75 Adc,DD DD D DV = 5.0 Vdc, R = 9.1 Ω) (Note 2.)GS GTurn–Off Delay Time t – 113 160d(off)Fall Time t – 170 240fGate Charge Q – 66 92 nCT(V (V = 48 Vdc, I 48 Vd I = 75 Adc, 75 AdDS DQ – 9.0 –1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 2. 2.) )GS GSQ – 47 –2SOURCE–DRAIN DIODE CHARACTERISTICSForward On–Voltage (I = 75 Adc, V = 0 Vdc) (Note 2.) V – 1.0 1.15 VdcS GS SD(I = 75 Adc, V = 0 Vdc, T = 150°C) – 0.9 –S GS JReverse Recovery Time t – 70 – nsrr(I (I = 75 Adc, V 75 Ad V = 0 Vdc, 0 VdS GSt – 43 –adI dI /dt /dt = 100 A/ = 100 A/μ μs) s) ( (Note Note 2. 2.) )S St – 27 –bReverse Recovery Stored Charge Q – 0.16 – μCRR2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
