NTP75N06G ,Power MOSFET 75 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP75N06L ,Power MOSFET 75 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP85N03 ,Power MOSFET 85 Amps, 28 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP90N02 ,Power MOSFET 90 Amps / 24 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTQD6866R2 ,Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8MAXIMUM RATINGS (T = 25°C unless otherwise noted)G1 G2CRating Symbol Value UnitS1 S2Drain–to–Source ..
NTQD6968NR2 ,Power MOSFET 7.0 A, 20 V Common Drain, Dual N-Channel, TSSOP-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTP75N06G
Power MOSFET 75 Amps, 60 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 1) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 60 71 −GS DTemperature Coefficient (Positive) − 73 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 10DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 100DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage (Note 1) V VdcGS(th)(V = V , I = 250 Adc) 2.0 2.8 4.0DS GS DThreshold Temperature Coefficient (Negative) − 8.0 − mV/°CStatic Drain−to−Source On−Resistance (Note 1) R mDS(on)(V = 10 Vdc, I = 37.5 Adc) − 8.2 9.5GS DStatic Drain−to−Source On−Voltage (Note 1) V VdcDS(on)(V = 10 Vdc, I = 75 Adc) − 0.72 0.86GS D(V = 10 Vdc, I = 37.5 Adc, T = 150°C) − 0.63 −GS D JForward Transconductance (Note 1) (V = 15 Vdc, I = 37.5 Adc) g − 40.2 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 3220 4510 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC − 1020 1430ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 234 330rssSWITCHING CHARACTERISTICS (Note 2)Turn−On Delay Time t − 16 25 nsd(on)Rise Time t − 112 155r(V (V = 30 Vdc, I 30 Vdc, I = 75 Adc, 75 Adc,DD DD D DV = 10 Vdc, R = 9.1 ) (Note 1)GS GTurn−Off Delay Time t − 90 125d(off)Fall Time t − 100 140fGate Charge Q − 92 130 nCT(V (V = 48 Vdc, I 48 Vd I = 75 Adc, 75 AdDS DQ − 14 −1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 1 1) )GS GSQ − 44 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 75 Adc, V = 0 Vdc) (Note 1) V − 1.0 1.1 VdcS GS SD(I = 75 Adc, V = 0 Vdc, T = 150°C) − 0.9 −S GS JReverse Recovery Time t − 77 − nsrr(I (I = 75 Adc, V 75 Ad V = 0 Vdc, 0VdS GSt − 49 −adI dI /dt /dt = 100 A/ = 100 A/s s) ) (Note (Note 1 1) )S St − 28 −bReverse Recovery Stored Charge Q − 0.16 − CRR1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperatures.
