NTP5864N ,Power MOSFET, 60 V, 63 A, 12.4 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTP5864NG , Power MOSFET 60 V, 63 A, 12.4 mOhm
NTP6410AN , N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTP6410ANG , N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTP6411AN , N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
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OZ964G , Change Summary
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NTP5864N
Power MOSFET, 60 V, 63 A, 12.4 mΩ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 60 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 58 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 60 VDSGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(TH) GS DS DGate Threshold Temperature V /Tï 10 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 20 A 10.2 12.4 mDS(on) GS DForward Transconductance g V = 15 V, I = 20 A 10 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1680 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 189OSSV = 25 VDSReverse Transfer Capacitance C 124RSSnCTotal Gate Charge Q 31G(TOT)Threshold Gate Charge Q 2.0G(TH)V = 10 V, V = 48 V, GS DSI = 20 ADGateï toï Source Charge Q 7.3GSGateï toï Drain Charge Q 10GDGate Resistance R 0.5 gSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 10 nsd(ON)Rise Time t 6.4rV = 10 V, V = 48 V, GS DDI = 20 A, R = 2.5 D GTurnï Off Delay Time t 18d(OFF)Fall Time t 4.6fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.94 1.2 VSD JV = 0 V, GSI = 40 AST = 125°C 0.84JReverse Recovery Time t 24 nsRRCharge Time t 16aV = 0 V, dI /dt = 100 A/s,GS SDI = 20 ASDischarge Time t 7.9bReverse Recovery Charge Q 20 nCRR2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
