NTP2955 ,Power MOSFET -60 V, -12 A, Single P-Channel, TO-220ABELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTP2955G , Power MOSFET −60 V, −12 A, Single P−Channel, TO−220
NTP30N06L ,Power MOSFET 30 Amps, 60 Volts, Logic Level2NTP30N06L, NTB30N06L60 60V = 10 V V ≥ 10 VGS DS5.5 V5 V50 508 V6 V4.5 V40 4030 304 V20 203.5 VT = ..
NTP45N06 ,Power MOSFET 45 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP52N10G ,N-Channel Enhancement Mode TO-2203R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTP5404N , Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
NTP2955
Power MOSFET -60 V, -12 A, Single P-Channel, TO-220AB
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A−60 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 67 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C−1.0 ADSS JV = 0 V, GSV = −48 VDST = 125°C−10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = −250 A−2.0−4.0 VGS(TH) GS DS DNegative Threshold Temperature V /T 56 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R 156 196DS(on) V = −10 V, I = −12 A mGS DForward Transconductance g V = −60 V, I = −12 A 6.0 SFS DS DCHARGES AND CAPACITANCESpFInput Capacitance C 507 700ISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 150 250OSSV = −25 VDSReverse Transfer Capacitance C 48 98RSSTotal Gate Charge Q 14 nCG(TOT)Threshold Gate Charge Q 1.6 2.5G(TH)V = −10 V, V = −48 V, GS DSI = −12 ADGate−to−Source Charge Q 3.4GSGate−to−Drain Charge Q 6.2GDSWITCHING CHARACTERISTICS (Note 3)nsTurn−On Delay Time t 10 20d(on)Rise Time t 41 80rV = −10 V, V = −30 V, GS DDI = −12 A, R = 9.1 D GTurn−Off Delay Time t 27 47d(off)Fall Time t 45 85fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C−1.6−2.0 VSD JV = 0 V, GSI = −12 AST = 125°C−1.36JReverse Recovery Time t 53RRCharge Time t 42nsaV = 0 V, dI /dt = 100 A/s, GS SI = −12 ASDischarge Time t 12bReverse Recovery Charge Q 126 nCRR2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
