NTMSD3P303R2 ,FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 PackageMAXIMUM RATINGS (T = 25°C unless otherwise noted)420 mV @ I = 3.0 AJFRating Symbol Value UnitDrain− ..
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NTMSD3P303R2
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
MAXIMUM RATINGS (T = 25°C unless otherwise noted)420 mV @ I = 3.0 AJFRating Symbol Value UnitDrain−to−Source Voltage V −30 VDSS1 8Gate−to−Source Voltage − Continuous V 20 V A CGS82 7Thermal Resistance −A CJunction−to−Ambient (Note 1.) R 171 °C/WθJA 6DS1Total Power Dissipation @ T = 25°C P 0.73 WA D 3Continuous Drain Current @ T = 25°C I −2.34 AA D G DSO−84 5Continuous Drain Current @ T = 70°C I −1.87 AA DCASE 751Pulsed Drain Current (Note 4.) I −8.0 ADM(TOP VIEW)STYLE 18Thermal Resistance −Junction−to−Ambient (Note 2.) R 100 °C/WθJAMARKING DIAGRAMTotal Power Dissipation @ T = 25°C P 1.25 WA D& PIN ASSIGNMENTSContinuous Drain Current @ T = 25°C I −3.05 AA DContinuous Drain Current @ T = 70°C I −2.44 AA D1 8Pulsed Drain Current (Note 4.) I −12 A Anode CathodeDM2 7Thermal Resistance −Anode CathodeE3P3033 6Junction−to−Ambient (Note 3.) R 62.5 °C/WθJALYWWSource DrainTotal Power Dissipation @ T = 25°C P 2.0 WA D 4 5GateDrainContinuous Drain Current @ T = 25°C I −3.86 AA DContinuous Drain Current @ T = 70°C I −3.10 AA D (Top View)Pulsed Drain Current (Note 4.) I −15 ADME3P303 = Device CodeOperating and Storage T , T −55 to °CJ stgL = Assembly LocationTemperature Range +150Y = YearSingle Pulse Drain−to−Source Avalanche E 140 mJASWW = Work WeekEnergy − Starting T = 25°C (V =J DD−30 Vdc, V = −4.5 Vdc, Peak I =GS L−7.5 Apk, L = 5 mH, R = 25 Ω)GORDERING INFORMATIONMaximum Lead Temperature for Soldering T 260 °CL†Device Package ShippingPurposes, 1/8″ from case for 10 seconds1. Minimum FR−4 or G−10 PCB, Steady State.NTMSD3P303R2 SO−8 2500/Tape & Reel2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State.†For information on tape and reel specifications,3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), including part orientation and tape sizes, pleaset ≤ 10 seconds.refer to our Tape and Reel Packaging Specification4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 20031 Publication Order Number:December, 2003 − Rev. 1 NTMSD3P303R2/DNTMSD3P303R2SCHOTTKY
