NTMS5P02R2 ,Power MOSFET -5.4 Amps, -20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain-to-Source Voltage V ..
NTMS7N03R2 ,Power MOSFET 7 Amps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CSRating Symbol Value UnitDrain-to-Source Voltage ..
NTMSD2P102L ,FETKY®MAXIMUM RATINGS (T = 25°C unless otherwise noted)J20 VOLTSRating Symbol Value Unit580 mV @ I = 2.0 ..
NTMSD2P102LR2 ,FETKY®ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 6)JCharacteristic Symbol Min Typ ..
NTMSD3P102R2SG , P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package
NTMSD3P303R2 ,FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 PackageMAXIMUM RATINGS (T = 25°C unless otherwise noted)420 mV @ I = 3.0 AJFRating Symbol Value UnitDrain− ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS5P02-NTMS5P02R2
Power MOSFET -5.4 Amps, -20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = -250 μAdc) -20 - -GS DTemperature Coefficient (Positive) - -15 - mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = -16 Vdc, V = 0 Vdc, T = 25°C) - - -1.0DS GS J(V = -16 Vdc, V = 0 Vdc, T = 125°C) - - -10DS GS J(V = -20 Vdc, V = 0 Vdc, T = 25°C) - -0.2 -DS GS JGate-Body Leakage Current I nAdcGSS(V = -10 Vdc, V = 0 Vdc) - - -100GS DSGate-Body Leakage Current I nAdcGSS(V = +10 Vdc, V = 0 Vdc) - - 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = -250 μAdc) -0.65 -0.9 -1.25DS GS DTemperature Coefficient (Negative) - 2.9 - mV/°CStatic Drain-to-Source On-State Resistance R ΩDS(on)(V = -4.5 Vdc, I = -5.4 Adc) - 0.026 0.033GS D(V = -2.5 Vdc, I = -2.7 Adc) - 0.037 0.048GS DForward Transconductance (V = -9.0 Vdc, I = -5.4 Adc) g - 15 - MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C - 1375 1900 pFiss(V (V = -16 Vdc, V 16 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC - 510 900ossf = 1.0 MHz f = 1.0 MHz) )Reverse Transfer CapacitanceC - 200 380rssSWITCHING CHARACTERISTICS (Notes 6 & 7)Turn-On Delay Time t - 18 35 nsd(on)(V = -16 Vdc, I = -1.0 Adc,Rise Time DD D t - 25 50rV V = -4.5 Vdc, = -4 5 VdcGS GSTurn-Of f Delay Time t - 70 125d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t - 55 100fTurn-On Delay Time t - 22 - nsd(on)(V = -16 Vdc, I = -5.4 Adc,Rise Time DD D t - 70 -rV V = -4.5 Vdc, = -4 5 VdcGS GSTurn-Of f Delay Time t - 65 -R R = 6.0 6.0 Ω Ω) ) d(off)G GFall Time t - 90 -fnCTotal Gate Charge Q - 20 35tot(V (V = - =-16 16 Vdc Vdc, ,DS DSGate-Source Charge V = -4.5 Vdc, Q - 4.0 -GS GS gsII = -5.4 Adc) 5 4 Ad )DGate-Drain Charge Q - 7.0 -gdBODY-DRAIN DIODE RATINGS (Note 6)Diode Forward On-Voltage (I = -5.4 Adc, V = 0 V) V - -0.95 -1.25 VdcS GS SD(I = -5.4 Adc, V = 0 Vdc, T = 125°C) - -0.72 -S GS JReverse Recovery Time t - 40 75 nsrr(I (I = -5.4 Adc, V 5 4 Ad V = 0 Vdc, 0VdS GSt - 20 -adI dI /dt /dt = 100 A/ = 100 A/μ μs) s)S St - 20 -bReverse Recovery Stored Charge Q - 0.03 - μCRR5. Handling precautions to protect against electrostatic discharge is mandatory.6. Indicates Pulse Test: Pulse Width = 300 μs max, Duty Cycle = 2%.7. Switching characteristics are independent of operating junction temperature.
