NTMS4N01R2 ,Power MOSFET 4.2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *CCharacteristic Symbol Min Typ Max Un ..
NTMS5P02 ,Power MOSFET -5.4 Amps, -20 Volts• High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency• Miniature SO- 8 Surf ..
NTMS5P02R2 ,Power MOSFET -5.4 Amps, -20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain-to-Source Voltage V ..
NTMS7N03R2 ,Power MOSFET 7 Amps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CSRating Symbol Value UnitDrain-to-Source Voltage ..
NTMSD2P102L ,FETKY®MAXIMUM RATINGS (T = 25°C unless otherwise noted)J20 VOLTSRating Symbol Value Unit580 mV @ I = 2.0 ..
NTMSD2P102LR2 ,FETKY®ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 6)JCharacteristic Symbol Min Typ ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4N01-NTMS4N01R2
Power MOSFET 4.2 Amps, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 20 – –GS DTemperature Coefficient (Positive) – 20 – mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = 12 Vdc, V = 0 Vdc, T = 25°C) – – 1.0DS GS J(V = 12 Vdc, V = 0 Vdc, T = 125°C) – – 10DS GS J(V = 20 Vdc, V = 0 Vdc, T = 25°C) – 0.2 –DS GS JGate–Body Leakage Current I nAdcGSS(V = +10 Vdc, V = 0 Vdc) – – 100GS DSGate–Body Leakage Current I nAdcGSS(V = –10 Vdc, V = 0 Vdc) – – –100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = 250 μAdc) 0.6 0.95 1.2DS GS DTemperature Coefficient (Negative) – –3.0 – mV/°CStatic Drain–to–Source On–State Resistance R ΩDS(on)(V = 4.5 Vdc, I = 4.2 Adc) – 0.030 0.04GS D(V = 2.7 Vdc, I = 2.1 Adc) – 0.035 0.05GS D(V = 2.5 Vdc, I = 2.0 Adc) – 0.037 –GS DForward Transconductance (V = 2.5 Vdc, I = 2.0 Adc) g – 10 – MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C – 870 1200 pFiss(V (V = 10 Vdc, V 10 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC – 260 400ossf = 1.0 MHz f = 1.0 MHz) )Reverse Transfer CapacitanceC – 60 100rssSWITCHING CHARACTERISTICS (Notes 5. and 6.)Turn–On Delay Time t – 13 25 nsd(on)(V = 12 Vdc, I = 4.2 Adc,DD DRise Time t – 35 65rV V = 4.5 Vdc, =45VdcGS GSTurn–Off Delay Time t – 45 75R R = 2.3 2.3 Ω Ω) ) d(off)G GFall Time t – 50 90fTotal Gate Charge Q – 11 16 nCtot(V (V = = 12 12 Vdc, Vdc,DS DSGate–Source Charge V = 4.5 Vdc, Q – 2.0 –GS GS gsII = 4.2 Adc) 42Ad )DGate–Drain Charge Q – 3.0 –gdBODY–DRAIN DIODE RATINGS (Note 5.)Diode Forward On–Voltage (I = 4.2 Adc, V = 0 Vdc) V – 0.85 1.1 VdcS GS SD(I = 4.2 Adc, V = 0 Vdc, T = 125°C) – 0.70 –S GS JReverse Recovery Time t – 20 – nsrr(I (I = 4.2 Adc, V 42Ad V = 0 Vdc, 0VdS GSt – 12 –adI dI /dt = 100 A/ /dt = 100 A/μ μs) s)S St – 8.0 –bReverse Recovery Stored Charge Q – 0.01 – μCRR5. Indicates Pulse Test: Pulse Width = 300 μs max, Duty Cycle = 2%.6. Switching characteristics are independent of operating junction temperature.* Handling precautions to protect against electrostatic discharge is mandatory.
