NTMS4800N ,Power MOSFET, 30 V, 8.0 A, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4800NR2G , Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4801NR2G , Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4939NR2G , Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4N01 ,Power MOSFET 4.2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain–to–Source Voltage V ..
NTMS4N01R2 ,Power MOSFET 4.2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) *CCharacteristic Symbol Min Typ Max Un ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4800N
Power MOSFET, 30 V, 8.0 A, N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 26 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.0 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 7.5 A 12.5 20 mDS(on)GS DV = 4.5 V, I = 6.5 A 20 27GS DForward Transconductance g V = 1.5 V, I = 7.5 A 21 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 940 pFissOutput Capacitance C 225oss V = 0 V, f = 1.0 MHz, V = 15 VGS DSReverse Transfer Capacitance C 125rssTotal Gate Charge Q 7.7 nCG(TOT)Threshold Gate Charge Q 1.1G(TH)V = 4.5 V, V = 15 V, I = 7.5 AGS DS DGate−to−Source Charge Q 3.3GSGate−to−Drain Charge Q 3.2GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 7.5 A 15.2 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 9.4 nsd(on)Rise Time t 4.0rV = 10 V, V = 15 V, GS DSI = 1.0 A, R = 6.0 D GTurn−Off Delay Time t 21d(off)Fall Time t 6.5fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.75 1.0 VSD JV = 0 V, I = 2.0 AGS ST = 125°C 0.59JReverse Recovery Time t 17.8 nsRRCharge Time t 8.3aV = 0 V, d /d = 100 A/s,GS IS tI = 2.0 ASDischarge Time t 9.5bReverse Recovery Charge Q 8.0 nCRRPACKAGE PARASITIC VALUESSource Inductance L 0.66 nHSDrain Inductance L 0.20 nHDT = 25°CAGate Inductance L 1.5 nHGGate Resistance R 1.5 3.0 G3. Pulse Test: pulse width = 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
