NTMS4706N ,Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4706NR2 , Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4800N ,Power MOSFET, 30 V, 8.0 A, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4800NR2G , Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4801NR2G , Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4939NR2G , Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4706N
Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 21 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 50JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T −4.8 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 10.3 A 9.0 12 mDS(on) GS DV = 4.5 V, I = 10 A 11.4 15GS DForward Transconductance g V = 15 V, I = 10 A 19 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 950issOutput Capacitance C 400V = 0 V, f = 1.0 MHz, V = 24 Voss GS DSReverse Transfer Capacitance C 100rssnCTotal Gate Charge Q 10 15G(TOT)Threshold Gate Charge Q 1.25G(TH)V = 4.5 V, V = 15 V, I = 10 AGS DS DGate−to−Source Charge Q 2.4GSGate−to−Drain Charge Q 4.5GDGate Resistance R 1.82 GSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 7.5 12 nsd(on)Rise Time t 4.0 8.0rV = 10 V, V = 15 V, I = 1.0 A,GS DD DR = 3.0 Turn−Off Delay Time t G 24 40d(off)Fall Time t 14 25fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V VT = 25°C 0.74 1.0SD JV = 0 V, I = 2.1 AGS ST = 125°C 0.57JReverse Recovery Time t 34 nsRRCharge Time t 16aV = 0 V, d /d = 100 A/s,GS IS tI = 2.1 ASDischarge Time t 18bReverse Recovery Charge Q 29 nCRR3. Pulse Test: pulse width = 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
