NTMS4705N ,Power MOSFET 30 V, 12 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4706N ,Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4706NR2 , Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4800N ,Power MOSFET, 30 V, 8.0 A, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4800NR2G , Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4801NR2G , Power MOSFET 30 V, 12 A, N−Channel, SO−8
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
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OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4705N
Power MOSFET 30 V, 12 A, Single N-Channel, SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain-to-Source Breakdown Voltage V /T 15 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V =GS DS24 VT = 125°C 50JGate-to-Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.0 mV/°CGS(TH) JCoefficientDrain-to-Source On Resistance R V = 10 V, I = 12 A 8.0 10 mDS(on)GS DV = 4.5 V, I = 10 A 10.5 14GS DForward Transconductance g V = 15 V, I = 10 A 19 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1078 pFissOutput Capacitance C 460oss V = 0 V, f = 1.0 MHz, V = 24 VGS DSReverse Transfer Capacitance C 127rssTotal Gate Charge Q 11 18 nCG(TOT)Threshold Gate Charge Q 1.1G(TH)V = 4.5 V, V = 15 V, I = 10 AGS DS DGate-to-Source Charge Q 2.1GSGate-to-Drain Charge Q 5.8GDGate Resistance R 1.76 3.5 GSWITCHING CHARACTERISTICS (Note 4)Turn-On Delay Time t 7.8 nsd(on)Rise Time t 4.7rV = 10 V, V = 15 V, I = 1.0 A,GS DD DR = 3.0 GTurn-Off Delay Time t 27d(off)Fall Time t 17fDRAIN-SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.73 1.0 VSD JV = 0 V, I = 3.0 AGS ST = 125°C 0.51JReverse Recovery Time t 38 nsRRCharge Time t 17aV = 0 V, d /d = 100 A/s,GS IS tI = 3.0 ASDischarge Time t 21bReverse Recovery Charge Q 30 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
