NTMS4503N ,Power MOSFET 28 V, 14 A, N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4704NR2 , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
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NTMS4704NR2G , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
NTMS4705N ,Power MOSFET 30 V, 12 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4706N ,Power MOSFET 30 V, 10.3 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OZ6812T , ACPI CardBus Controller
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OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4503N
Power MOSFET 28 V, 14 A, N-Channel SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 28 31 − V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / − − 22 − mV/°C(BR)DSSTemperature Coefficient TJZero Gate Voltage Drain Current I T = 25°C − − 1.0 ADSS JV = 0 V, V = 24 VGS DST = 100°C − − 25JGate−to−Source Leakage Current I V = 0 V, V = 20 V − − 100 nAGSS DS GSON CHARACTERISTICS (Note 4)Gate Threshold Voltage V V = V , I = 250 A 1.0 − 2.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T − − −5.0 − mV/°CGS(TH) JDrain−to−Source On Resistance RV = 10 V, I = 14 A − 7.0 8.0 mDS(on) GS DV = 4.5 V, I = 10 A − 8.8 9.8GS DForward Transconductance g V = 10 V, I = 14 A − 30 − SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C − 2400 − pFISSOutput Capacitance C − 1000 −V = 0 V, f = 1.0 MHz, V = 16 VOSSGS DS Reverse Transfer Capacitance C − 375 −RSSTotal Gate Charge Q − 23 − nCG(TOT)Threshold Gate Charge Q − 2.0 −G(TH)V = 4.5 V, V = 16 V, I = 10 AGS DS DGate−to−Source Charge Q − 5.0 −GSGate−to−Drain Charge Q − 12 −GDSWITCHING CHARACTERISTICS, V = V (Note 5)GSTurn−On Delay Time t − 18.5 − nsd(ON)Rise Time tr − 70 −V = 4.5 V, V = 16 V, I = 10 A,GS DD DR = 2.0 GTurn−Off Delay Time t − 21 −d(OFF)Fall Time t − 23 −fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V VT = 25°C − 0.82 1.2SD JV = 0 V, I = 10 AGS ST = 125°C − 0.65 −JReverse Recovery Time t − 48 − nsRRV = 0 V, Charge Time T GS − 23 −ad /d = 100 A/s,ISD tDischarge Time T − 25 −I = 14 AbSReverse Recovery Charge Q − 25 − nCRR4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.5. Switching characteristics are independent of operating junction temperatures.
