NTMS4404NR2 ,Power MOSFET 30 V, 12 A, Single N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4503N ,Power MOSFET 28 V, 14 A, N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4704NR2 , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
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NTMS4704NR2G , Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8
NTMS4705N ,Power MOSFET 30 V, 12 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTMS4404NR2
Power MOSFET 30 V, 12 A, Single N-Channel SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitsOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 25 mV/°C(BR)DSSTemperature Coefficient TJZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV V = 0 V 0V, V V = 30 V 30 VGS DST = 100°C 5.0JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.2 3.0 VGS(TH) GS DS DGate Threshold Temperature Coefficient V /T −5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V, I = 12 A 9.7 11.5 mDS(on) () GS DV = 4.5 V, I = 6.0 A 15.5 17.5GS DForward Transconductance g V = 15 V, I = 12 A 17.5 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1975 2500 pFISSOutput Capacitance C 575 750V = 0 V,, , f = 1 MHz, V = 24 VOSSGS GS DS DS Reverse Transfer Capacitance C 180 300RSSTotal Gate Charge Q 50 70 nCG(TOT)Threshold Gate Charge Q 2.4G(TH)V V = 10 V =10V, V V = 24 V =24V, II = 12 A =12AGS DS DGate−to−Source Charge Q 7.5GSGate−to−Drain Charge Q 16GDSWITCHING CHARACTERISTICS, V = 10 V (Note 4)GSTurn−On Delay Time t 15 25 nsd(ON)Rise Time tr 25 50V V = 10 V = 10 V, , V V = 24 V = 24 V, , I I = 12 A, = 12 A,GS GS DS DS D DR = 2.5 GTurn−Off Delay Time t 35 55d(OFF)Fall Time t 15 30fSWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)GSnsTurn−On Delay Time t 20d(ON)Rise Time tr 80V V = 4.5 V = 4.5 V, , V V = 24 V = 24 V, , I I = 6.0 A, = 6.0 A,GS GS DS DS D DR = 2.5 GTurn−Off Delay Time t 25d(OFF)Fall Time t 15fDRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)Forward Diode Voltage V T = 25°C 0.80 1.1 VSD JV V = 0 V =0V, II = 6.0 A =60AGS ST = 125°C 0.65JReverse Recovery Time t 40 55 nsRRCharge Time t 23aV V = 0 V 0 V, , d d /d /d = 100 A/ 100 A/s, s,GS GS ISD ISD ttI = 6.0 ASDischarge Time tb 17Reverse Recovery Charge Q 0.05 CRRNOTES:3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
