NTMS4107N ,Power MOSFET 30 V, 18 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4107NR2 , Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4176P ,Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition ..
NTMS4176PR2G , Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
NTMS4404NR2 ,Power MOSFET 30 V, 12 A, Single N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMS4503N ,Power MOSFET 28 V, 14 A, N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4107N
Power MOSFET 30 V, 18 A, Single N-Channel, SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 21 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 7.4 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 4.5 V, I = 14 A 4.7 5.5 mDS(on) GS DV = 10 V, I = 15 A 3.4 4.5GS DForward Transconductance g V = 15 V, I = 18 A 25 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 6000 pFISSOutput Capacitance C 1030V = 0 V, f = 1.0 MHz, V = 15 VOSSGS DS Reverse Transfer Capacitance C 550RSSTotal Gate Charge Q 45 nCG(TOT)Threshold Gate Charge Q 6.5G(TH)V = 4.5 V, V = 15 V, I = 18 AGS DS DGate−to−Source Charge Q 16.3GSGate−to−Drain Charge Q 19.3GDGate Resistance R 0.60 GSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 9.0 nsd(ON)Rise Time t 10rV = 10 V, V = 15 V, GS DSI = 1.0 A, R = 6.0 D GTurn−Off Delay Time t 94d(OFF)Fall Time t 38fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.8 1.1 VSDJV = 0 V, I = 3.0 AGS ST = 125°C 0.6JnsReverse Recovery Time t 41RRCharge Time t 20aV = 0 V, d /d = 100 A/s,GS IS tI = 3.0 ASDischarge Time t 21bReverse Recovery Charge Q 48 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
