NTMS4101PR2G ,Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Test Conditions Symbol Min T ..
NTMS4107N ,Power MOSFET 30 V, 18 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4107NR2 , Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4176P ,Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition ..
NTMS4176PR2G , Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
NTMS4404NR2 ,Power MOSFET 30 V, 12 A, Single N-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS4101PR2G
Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Test Conditions Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V = 0 V, I = −250 A V −20 VGS D (BR)DSSZero Gate Voltage Drain Current V = 0 V, V = −16 V I −10 AGS DS DSSGate−to−Source Leakage Current V = ±8.0 V, V = 0 V I ±100 nAGS DS GSSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V = V , I = −250 A V −0.45 VGS DS D GS(th)Drain−to−Source On−Resistance V = −4.5 V, I = −6.9 A R 16 19 mGS D DS(on) ()V = −2.5 V, I = −6.5 A 22 30GS DForward Transconductance V = −15 V, I = −6.9 A g 70 SDS D FSCHARGES AND CAPACITANCESInput Capacitance C 3200 pFissV V = 0 V 0V, f = 1 MHz, f 1MHGSOutput Capacitance C 320ossV V = −10 V = −10 VDS DSReverse Transfer Capacitance C 192rssTotal Gate Charge Q 29.5 32 nCG(TOT)V V = −4.5 V 45V, V V = −10 V 10 V,GS DSGate−to−Source Charge Q 6.0GSII = −6.9 A = −6.9 AD DGate−to−Drain Charge Q 7.5GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 12.5 nsd(on)Rise Time t 9.0rV V = −4.5 4.5 V V, , V V = −10 V 10 V,,GS GS DD DDI = −1.0 A, R = 6.0 ΩD GTurn−Off Delay Time t 144d(off)Fall Time t 38.5fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V = 0 V, I = −6.9 A V 0.72 0.95 VGS S SDReverse Recovery Time t 28 35 nsrrCharge Time t 12aV V = 0 0 V, V, V V = −10 V 10 V,,GS GS DS DSdI /dt = 100 A/s, I = −6.9 AS SDischarge Time t 15bReverse Recovery Charge Q .017 nCrr2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperature.
