NTMS3P03R2 ,Power MOSFET -3.05 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5.)JCharacteristic Symbol Min Ty ..
NTMS4101PR2G ,Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Test Conditions Symbol Min T ..
NTMS4107N ,Power MOSFET 30 V, 18 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4107NR2 , Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4176P ,Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition ..
NTMS4176PR2G , Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS3P03R2
Power MOSFET -3.05 Amps, -30 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5.)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = –250 μAdc) –30 – –GS DTemperature Coefficient (Positive) – –30 – mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = –30 Vdc, V = 0 Vdc, T = 25°C) – – –1.0DS GS J(V = –30 Vdc, V = 0 Vdc, T = 125°C) – – –10DS GS JGate–Body Leakage Current I nAdcGSS(V = –20 Vdc, V = 0 Vdc) – – –100GS DSGate–Body Leakage Current I nAdcGSS(V = +20 Vdc, V = 0 Vdc) – – 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = –250 μAdc) –1.0 –1.7 –2.5DS GS DTemperature Coefficient (Negative) – 3.6 –Static Drain–to–Source On–State Resistance R ΩDS(on)(V = –10 Vdc, I = –3.05 Adc) – 0.063 0.085GS D(V = –4.5 Vdc, I = –1.5 Adc) – 0.090 0.115GS DForward Transconductance (V = –15 Vdc, I = –3.05 Adc) g – 5.0 – MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C – 520 750 pFiss(V (V = –24 Vdc, V 24 Vd V = 0 Vdc, 0 VdDS GSOutput CapacitanceC – 170 325ossf = 1.0 MHz f = 1.0 MHz) )Reverse Transfer CapacitanceC – 70 135rssSWITCHING CHARACTERISTICS (Notes 6. & 7.)Turn–On Delay Time t – 12 22 nsd(on)(V = –24 Vdc, I = –3.05 Adc,Rise Time DD D t – 16 30rV V = –10 Vdc, = –10 VdcGS GSTurn–Off Delay Time t – 45 80R R = 6.0 6.0 Ω Ω) ) d(off)G GFall Time t – 45 80fTurn–On Delay Time t – 16 – nsd(on)(V = –24 Vdc, I = –1.5 Adc,Rise Time DD D t – 42 –rV V = –4.5 Vdc, =–45VdcGS GSTurn–Off Delay Time t – 32 –d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t – 35 –fTotal Gate Charge Q – 16 25 nCtot(V (V = – =–24 24 Vdc, Vdc,DS DSGate–Source Charge Q – 2.0 –V = –10 Vdc,gsGS GSI I = –3.05 Adc) 3 05 Ad )DGate–Drain Charge Q – 4.5 –gdBODY–DRAIN DIODE RATINGS (Note 6.)Diode Forward On–Voltage (I = –3.05 Adc, V = 0 V) V – –0.96 –1.25 VdcS GS SD(I = –3.05 Adc, V = 0 V, T = 125°C) – –0.78 –S GS JReverse Recovery Time t – 34 – nsrr( (II = –3.05 Adc, V 305Ad V = 0 Vdc, 0VdS GSt – 18 –adI dI /dt /dt = 100 A/ = 100 A/μ μs) s)S St – 16 –bReverse Recovery Stored Charge Q – 0.03 – μCRR5. Handling precautions to protect against electrostatic discharge is mandatory.6. Indicates Pulse Test: Pulse Width = 300 μs max, Duty Cycle = 2%.7. Switching characteristics are independent of operating junction temperature.
