NTMS10P02R2 ,HDTMOS3e Single SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)CCharacteristic Symbol Min Ty ..
NTMS3P03R2 ,Power MOSFET -3.05 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5.)JCharacteristic Symbol Min Ty ..
NTMS4101PR2G ,Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Test Conditions Symbol Min T ..
NTMS4107N ,Power MOSFET 30 V, 18 A, Single N-Channel, SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTMS4107NR2 , Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4176P ,Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)jkJCharacteristic Symbol Test Condition ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMS10P02R2
HDTMOS3e Single SO-8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = −250 μAdc) −20 − −GS DTemperature Coefficient (Positive) − −12.1 − mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = −20 Vdc, V = 0 Vdc, T = 25°C) − − −1.0DS GS J(V = −20 Vdc, V = 0 Vdc, T = 70°C) − − −5.0DS GS JGate−Body Leakage Current I nAdcGSS(V = −12 Vdc, V = 0 Vdc) − − −100GS DSGate−Body Leakage Current I nAdcGSS(V = +12 Vdc, V = 0 Vdc) − − 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 μAdc) −0.6 −0.88 −1.20DS GS DTemperature Coefficient (Negative) − 2.8 − mV/°CStatic Drain−to−Source On−State Resistance R ΩDS(on)(V = −4.5 Vdc, I = −10 Adc) − 0.012 0.014GS D(V = −2.5 Vdc, I = −8.8 Adc) − 0.017 0.020GS DForward Transconductance (V = −10 Vdc, I = −10 Adc) g − 30 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 3100 3640 pFiss(V (V = −16 Vdc, V 16 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC − 1100 1670ossf = 1.0 MHz f = 1.0 MHz) )Reverse Transfer CapacitanceC − 475 1010rssSWITCHING CHARACTERISTICS (Notes 5. & 6.)Turn−On Delay Time t − 25 35 nsd(on)(V = −10 Vdc, I = −1.0 Adc,Rise Time DD D t − 40 65rV V = −4.5 Vdc, = 4 5 VdcGS GSTurn−Off Delay Time t − 110 190d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t − 110 190fTurn−On Delay Time t − 25 − nsd(on)(V = −10 Vdc, I = −10 Adc,Rise Time DD D t − 100 −rV V = −4.5 Vdc, = 4 5 VdcGSGSTurn−Off Delay Time t − 100 −d(off)R R = 6.0 6.0 Ω Ω) )G GFall Time t − 125 −fTotal Gate Charge Q − 48 70 nCtot(V (V = − =−10 10 Vdc Vdc, ,DS DSGate−Source Charge Q − 6.5 −V = −4.5 Vdc,GS GS gsII = −10 Adc) 10 Ad )DGate−Drain Charge Q − 17 −gdBODY−DRAIN DIODE RATINGS (Note 5.)Diode Forward On−Voltage (I = −2.1 Adc, V = 0 Vdc) V − −0.72 −1.2 VdcS GS SD(I = −2.1 Adc, V = 0 Vdc, T = 125°C) − −0.60 −S GS JDiode Forward On−Voltage (I = −10 Adc, V = 0 Vdc) V − −0.90 − VdcS GS SD(I = −10 Adc, V = 0 Vdc, T = 125°C) − −0.75 −S GS JReverse Recovery Time t − 65 100 nsrr(I (I = −2.1 Adc, V 21Ad V = 0 Vdc, 0VdS GSt − 25 −adI dI /dt /dt = 100 A/ = 100 A/μ μs) s)S St − 40 −bReverse Recovery Stored Charge Q − 0.075 − μCRR4. Handling precautions to protect against electrostatic discharge is mandatory.5. Indicates Pulse Test: Pulse Width = 300 μs max, Duty Cycle = 2%.6. Switching characteristics are independent of operating junction temperature.
