NTMFS4943N ,30 V, 41 A, Single N−Channel, SO−8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4946NT1G , Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL
NTMFS4955NT1G , Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL
NTMS10P02R2 ,HDTMOS3e Single SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)CCharacteristic Symbol Min Ty ..
NTMS3P03R2 ,Power MOSFET -3.05 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5.)JCharacteristic Symbol Min Ty ..
NTMS4101PR2G ,Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Test Conditions Symbol Min T ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMFS4943N
30 V, 41 A, Single N−Channel, SO−8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V V = 0 V, I = 10.5 A, 34 V(BR)DSSt GS D(aval)(transient) T = 25°C, t = 100 nscase transientDrainï toï Source Breakdown Voltage V / 15(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.2 1.66 2.2 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 4.0 mV/°CGS(TH) JDrainï toï Source On Resistance R V = 10 V I = 30 A 5.8 7.2DS(on) GS DI = 15 A 5.8DmV = 4.5 V I = 30 A 8.2 11GS DI = 15 A 8.2DForward Transconductance g V = 1.5 V, I = 15 A 32 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 1401ISSOutput Capacitance C 446OSS V = 0 V, f = 1 MHz, V = 15 V pFGS DSReverse Transfer Capacitance C 16RSSCapacitance Ratio C / V = 0 V, V = 15 V, f = 1 MHz 0.011 0.023RSS GS DSCISSTotal Gate Charge Q 9.2G(TOT)Threshold Gate Charge Q 2.7G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGateï toï Source Charge Q 4.4GSGateï toï Drain Charge Q 1.9GDTotal Gate Charge Q V = 10 V, V = 15 V; I = 30 A 20.9 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 6)Turnï On Delay Time t 11d(ON)Rise Time t 31rV = 4.5 V, V = 15 V, GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 18d(OFF)Fall Time t 3.0f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
