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NTMFS4921NONN/a48avaiPower MOSFET, 30 V, 58.5 A, Single N-Channel


NTMFS4921N ,Power MOSFET, 30 V, 58.5 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTMFS4921N
Power MOSFET, 30 V, 58.5 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V V = 0 V, I = 13 A, 34(BR)DSSt GS D(aval)V(transient) T = 25°C, t = 100 nscase transientDrainï toï Source Breakdown Voltage V / 25(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.45 1.8 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T mV/°CGS(TH) JDrainï toï Source On Resistance R V = 10 V to I = 30 A 5.3 6.95DS(on) GS D11.5 VI = 15 A 5.2DmV = 4.5 V I = 30 A 8.6 10.8GS DI = 15 A 8.4DForward Transconductance g V = 1.5 V, I = 30 A 54 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1400ISSOutput Capacitance C 282OSS V = 0 V, f = 1 MHz, V = 12 V pFGS DSReverse Transfer Capacitance C 136RSSTotal Gate Charge Q 10.7 16G(TOT)Threshold Gate Charge Q 1.4G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGateï toï Source Charge Q 4.1GSGateï toï Drain Charge Q 3.8GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 25G(TOT) GS DSnCI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 13.3d(ON)Rise Time t 38rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurnï Off Delay Time t 16.6d(OFF)Fall Time t 3.8f3. Pulse Test: pulse width  300 s, duty cycle  2%.4. Switching characteristics are independent of operating junction temperatures.
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