NTMFS4839N ,Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839NH , Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL
NTMFS4841N ,Power MOSFET, 30 V, 57 A, Single N-ChannelMAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Sou ..
NTMFS4841NT3G , Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL
NTMFS4846NT1G , Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL
NTMFS4921N ,Power MOSFET, 30 V, 58.5 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMFS4839N
Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V / 25(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.8 mV/°CGS(TH) JDrainï toï Source On Resistance R V = 10 V to I = 30 A 4.5 5.5DS(on) GS D11.5 VI = 15 A 4.5DmV = 4.5 V I = 30 A 8.4 9.5GSDI = 15 A 8.4DForward Transconductance g V = 15 V, I = 15 A 14.7 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 1588ISSOutput Capacitance C V = 0 V, f = 1 MHz, V = 12 V 352 pFOSSGS DSReverse Transfer Capacitance C 196RSSTotal Gate Charge Q 13 18G(TOT)Threshold Gate Charge Q 1.6G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGateï toï Source Charge Q 4.8GSGateï toï Drain Charge Q 5.8GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 28G(TOT) GS DSnCI = 30 ADSWITCHING CHARACTERISTICS (Note 6)Turnï On Delay Time t 12d(ON)Rise Time t 29rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurnï Off Delay Time t 18d(OFF)Fall Time t 7.0fTurnï On Delay Time t 8.0d(ON)Rise Time t 21rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 24d(OFF)Fall Time t 7.0f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
