NTMFS4837N ,Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839N ,Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839NH , Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL
NTMFS4841N ,Power MOSFET, 30 V, 57 A, Single N-ChannelMAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Sou ..
NTMFS4841NT3G , Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL
NTMFS4846NT1G , Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
OZ962R , High-Efficiency Inverter Controller
NTMFS4837N
Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V 30 VV = 0 V, I = 250 A(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 25(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.7 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V to I = 30 A 3.5 5.0DS(on) GSD11.5 VI = 15 A 3.5DmV = 4.5 VI = 30 A 5.9 7.5GS DI = 15 A 5.9DForward Transconductance g V = 15 V, I = 15 A 15 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 2048ISSOutput Capacitance C 444V = 0 V, f = 1 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 239RSSTotal Gate Charge Q 14.2 22G(TOT)Threshold Gate Charge Q 2.98G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 5.7GSGate−to−Drain Charge Q 6.7GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 34.2G(TOT) GS DSnCI = 15 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 14.2d(ON)Rise Time t 55rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 19d(OFF)Fall Time t 10fTurn−On Delay Time t 8.5d(ON)Rise Time t 25.6rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 25.2d(OFF)Fall Time t 9.2f3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
