NTMFS4836N ,Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4837N ,Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839N ,Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839NH , Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL
NTMFS4841N ,Power MOSFET, 30 V, 57 A, Single N-ChannelMAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Sou ..
NTMFS4841NT3G , Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
NTMFS4836N
Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V 30 VV = 0 V, I = 250 A(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 25(BR)DSS JmV/°CTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 6.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V to I = 30 A 2.8 4.0DS(on) GSD11.5 VI = 15 A 2.8DmV = 4.5 VI = 30 A 4.8 6.0GS DI = 15 A 4.8DForward Transconductance g V = 15 V, I = 15 A 24 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 2677ISSOutput Capacitance C 565V = 0 V, f = 1 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 307RSSTotal Gate Charge Q 20 28G(TOT)Threshold Gate Charge Q 3.2G(TH)V = 4.5 V, V = 15 V; GS DSnCI = 30 ADGate−to−Source Charge Q 8.0GSGate−to−Drain Charge Q 8.0GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 45G(TOT) GS DSnCI = 30 ADSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 14d(ON)Rise Time t 30rV = 4.5 V, V = 15 V, GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 20d(OFF)Fall Time t 12fTurn−On Delay Time t 8.0d(ON)Rise Time t 27rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 31d(OFF)Fall Time t 7.0f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
