NTMFS4835N ,Power MOSFET, 30 V, 104 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4836N ,Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4837N ,Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839N ,Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839NH , Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL
NTMFS4841N ,Power MOSFET, 30 V, 57 A, Single N-ChannelMAXIMUM RATINGS (T = 25°C unless otherwise stated)JD (5,6)Parameter Symbol Value UnitDrainï toï Sou ..
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
NTMFS4835N
Power MOSFET, 30 V, 104 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V 30 VV = 0 V, I = 250 A(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 22.4(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1.0DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 1.9 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.3 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V to I = 30 A 2.9 3.5DS(on) GSD11.5 VI = 15 A 2.5DmV = 4.5 VI = 30 A 4.3 5.0GS DI = 15 A 3.9DForward Transconductance g V = 15 V, I = 15 A 21 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 3100ISSOutput Capacitance C 670V = 0 V, f = 1 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 360RSSTotal Gate Charge Q 22 39G(TOT)Threshold Gate Charge Q 4.7G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 8.3GSGate−to−Drain Charge Q 8.8GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 52G(TOT) GS DSnCI = 30 ADSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 16d(ON)Rise Time t 31rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 22d(OFF)Fall Time t 13fTurn−On Delay Time t 10d(ON)Rise Time t 23rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 30d(OFF)Fall Time t 10f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
