NTMFS4833N ,Single n-channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4834NT1G , Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL
NTMFS4835N ,Power MOSFET, 30 V, 104 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4836N ,Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4837N ,Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTMFS4839N ,Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OXUFS936QSE , Universal Interface to Quad SATA RAID Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6812T , ACPI CardBus Controller
OZ6912T , Single-Slot ACPI CardBus Controller
NTMFS4833N
Single n-channel, SO-8 FL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 17(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 7.12 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V to I = 30 A 1.3 2.0DS(on) GS D11.5 VI = 15 A 1.3DmV = 4.5 V I = 30 A 2.3 3.0GS DI = 15 A 2.3DForward Transconductance g V = 15 V, I = 15 A 30 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 5600ISSOutput Capacitance C 1200V = 0 V, f = 1 MHz, V = 12 V pFOSS GS DSReverse Transfer Capacitance C 650RSSTotal Gate Charge Q 39 58G(TOT)Threshold Gate Charge Q 6.0G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 16GSGate−to−Drain Charge Q 17GDTotal Gate Charge Q V = 11.5 V, V = 15 V; I = 30 A 88 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 25d(ON)Rise Time t 34rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 35d(OFF)Fall Time t 17fTurn−On Delay Time t 14d(ON)Rise Time t 19rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 50d(OFF)Fall Time t 10f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
