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NTMFS4701N
Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 7.2 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 50JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 4.5 V, I = 17 A 8.0 11 mDS(on) GS DV = 10 V, I = 20 A 6.0 8.0GS DForward Transconductance g V = 15 V, I = 20 A 70 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 1280ISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 24 V 500OSS GS DS Reverse Transfer Capacitance C 120RSSTotal Gate Charge Q 11 15 nCG(TOT)Threshold Gate Charge Q 1.1G(TH)V = 4.5 V, V = 15 V, I = 20 AGS DS DGate−to−Source Charge Q 2.0GSGate−to−Drain Charge Q 6.0GDGate Resistance R 1.4 GSWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)GSTurn−On Delay Time t 9.0 nsd(ON)Rise Time t 4.0rV = 10 V, V = 15 V, GS DDI = 1.0 A, R = 6.0 D GTurn−Off Delay Time t 29d(OFF)Fall Time t 19fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.75 1.0 VSD JV = 0 V, I = 6.0 AGS ST = 125°C 0.55JReverse Recovery Time t 34 nsRRCharge Time t 16aV = 0 V, dI /dt = 100 A/s,GS SI = 6.0 ASDischarge Time t 18bReverse Recovery Charge Q 27 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
