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NTMFS4120N
Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 21 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 7.4 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V, I = 26 A 3.5 4.5 mDS(on) GS DV = 4.5 V, I = 24 A 4.2 5.5GS DForward Transconductance g V = 15 V, I = 26 A 35 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 3600ISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 24 V 640OSS GS DS Reverse Transfer Capacitance C 380RSSTotal Gate Charge Q 33 50 nCG(TOT)Threshold Gate Charge Q 4.4G(TH)V = 4.5 V, V = 15 V, I = 24 AGS DS DGate−to−Source Charge Q 13GSGate−to−Drain Charge Q 14GDGate Resistance R 1.0GSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 24 nsd(ON)Rise Time t 32rV = 4.5 V, V = 15 V, GS DSI = 1.0 A, R = 3.0 D GTurn−Off Delay Time t 27d(OFF)Fall Time t 31fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.74 1.0 VSD JV = 0 V, I = 6.0 AGS ST = 125°C 0.6JReverse Recovery Time t 36 nsRRCharge Time t 18aV = 0 V, dI /dt = 100 A/s,GS SI = 6.0 ASDischarge Time t 18bReverse Recovery Charge Q 34 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
