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NTMFS4108N
Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 21 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V = 24 VGS DST = 125°C 25JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 7.5 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 4.5 V, I = 19 A 2.7 3.4 mDS(on) GS DV = 10 V, I = 21 A 1.8 2.2GS DForward Transconductance g V = 15 V, I = 10 A 25 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 6000 pFISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 1200OSS GS DS Reverse Transfer Capacitance C 700RSSnCTotal Gate Charge Q 54G(TOT)Threshold Gate Charge Q 11G(TH)V = 4.5 V, V = 24 V, I = 21 AGS DS DGate−to−Source Charge Q 16GSGate−to−Drain Charge Q 23GDGate Resistance R 0.7 GSWITCHING CHARACTERISTICS, V = 10 V (Note 6)GSTurn−On Delay Time t 45 nsd(ON)Rise Time t 60rV = 4.5 V, V = 15 V, GS DSI = 1.0 A, R = 6.0 D GTurn−Off Delay Time t 70d(OFF)Fall Time t 140fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.72 1.1 VSD JV = 0 V, I = 6.0 AGS ST = 125°C0.65JReverse Recovery Time t 41 nsRRCharge Time t 20aV = 0 V, d /d = 100 A/s,GS IS tI = 6.0 ASDischarge Time t 21bReverse Recovery Charge Q 45 nCRR23. Surface−mounted on FR4 board using 1″ sq. pad size (Cu area = 650 mm [1 oz] including traces).24. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 50 mm ).5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
