NTMD4N03R2 ,Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual3R , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE ()DS(on) I , DRAIN CUR ..
NTMD4N03R2 ,Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 DualELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTMD6N02 ,Power MOSFET 6.0 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)J SRating Symbol Value UnitDrain−to−Source Voltage ..
NTMD6N02R2 ,Power MOSFET 6.0 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)CCharacteristic Symbol Min Typ ..
NTMD6N02R2G , Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03 ,30V HD3e SO8 Dual3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (AMPS)DS(on) DS ..
OXMPCI952-VBAG , Integrated High Performance Dual UARTs, 8-bit Local Bus/Parallel Port. 3.3v PCI/miniPCI interface.
OXmPCI952-VBAG , Integrated High Performance Dual UARTs, 8-bit Local Bus/Parallel Port. 3.3v PCI/miniPCI interface.
OXPCIE200-TAAG , PCI Express multi-port bridge
OXPCIE200-TAAG , PCI Express multi-port bridge
OXUF922 , USB2.0 to Quad Serial Port Bridge
OXUF934DSA-LQAG , FireWire 400, USB 2.0, eSATA to SATA Controller
NTMD4N03R2
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual
3R , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE ()DS(on) I , DRAIN CURRENT (AMPS)DS(on) DR , DRAIN−TO−SOURCE RESISTANCE ()I , LEAKAGE (nA)DSS DS(on)I , DRAIN CURRENT (AMPS)DNTMD4N03R2, NVMD4N03R2POWER MOSFET SWITCHINGSwitching behavior is most easily modeled and predicted The capacitance (C ) is read from the capacitance curve atissby recognizing that the power MOSFET is charge a voltage corresponding to the off−state condition whencontrolled. The lengths of various switching intervals (t) calculating t and is read at a voltage corresponding tod(on)are determined by how fast the FET input capacitance can the on−state when calculating t .d(off)At high switching speeds, parasitic circuit elementsbe charged by current from the generator.complicate the analysis. The inductance of the MOSFETThe published capacitance data is difficult to use forsource lead, inside the package and in the circuit wiringcalculating rise and fall because drain−gate capacitancewhich is common to both the drain and gate current paths,varies greatly with applied voltage. Accordingly, gateproduces a voltage at the source which reduces the gate drivecharge data is used. In most cases, a satisfactory estimate ofcurrent. The voltage is determined by Ldi/dt, but since di/dtaverage input current (I ) can be made from aG(AV)is a function of drain current, the mathematical solution isrudimentary analysis of the drive circuit so thatcomplex. The MOSFET output capacitance alsot = Q/IG(AV)complicates the mathematics. And finally, MOSFETs havefinite internal gate resistance which effectively adds to theDuring the rise and fall time interval when switching aresistance of the driving source, but the internal resistanceresistive load, V remains virtually constant at a levelGSis difficult to measure and, consequently, is not specified.known as the plateau voltage, V . Therefore, rise and fallSGPThe resistive switching time variation versus gatetimes may be approximated by the following:resistance (Figure 9) shows how typical switchingt = Q x R /(V − V )r 2 G GG GSPperformance is affected by the parasitic circuit elements. Ift = Q x R /Vf 2 G GSPthe parasitics were not present, the slope of the curves wouldmaintain a value of unity regardless of the switching speed.whereThe circuit used to obtain the data is constructed to minimizeV = the gate drive voltage, which varies from zero to VGG GGcommon inductance in the drain and gate circuit loops andR = the gate drive resistanceGis believed readily achievable with board mountedand Q and V are read from the gate charge curve.2 GSP components. Most power electronic loads are inductive; thedata in the figure is taken with a resistive load, whichDuring the turn−on and turn−off delay times, gate current isapproximates an optimally snubbed inductive load. Powernot constant. The simplest calculation uses appropriateMOSFETs may be safely operated into an inductive load;values from the capacitance curves in a standard equationhowever, snubbing reduces switching losses.for voltage change in an RC network. The equations are:t = R C In [V /(V − V )]d(on) G iss GG GG GSPt = R C In (V /V )d(off) G iss GG GSP800T = 25°CJCiss600Crss400Ciss200CossCrssV = 0 V V = 0 VDS GS010 50 5 10 15 20 25V VGS DSGATE−TO−SOURCE OR DRAIN−TO−SOURCEVOLTAGE (VOLTS)Figure 7. Capacitance Variation
