NTMD4184PF ,Power MOSFET and Schottky Diode, -30 V, -4.0 A, Single P-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
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NTMD4184PF
Power MOSFET and Schottky Diode, -30 V, -4.0 A, Single P-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V V = 0 V, I = 250 A -30 V(BR)DSS GS DDrain-to-Source Breakdown Voltage V /T 30(BR)DSS JmV/°CTemperature CoefficientT = 25°C -1.0Zero Gate Voltage Drain Current IDSS JV = 0 V, GSAV = -24 VDST = 125°C -10JGate-to-Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A -1.0 -3.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 4.4 mV/°CGS(TH) JV = -10 V I = -3.0 A 70 95Drain-to-Source On Resistance RDS(on) GS DmV = -4.5 V I = -1.5 A 120 165GS DForward Transconductance g V = -1.5 V, I = -3.0 A 5.0 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 280 360ISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 80 110 pFOSSV = -10 VDSReverse Transfer Capacitance C 52 80RSSTotal Gate Charge Q 2.8 4.2G(TOT)Threshold Gate Charge Q 0.4G(TH) V = -4.5 V, V = -10 V, GS DSnCI = -3.0 AGate-to-Source Charge Q D 1.1GSGate-to-Drain Charge Q 1.1GDTotal Gate Charge Q V = -10 V, V = -10 V, 5.8 8.8G(TOT) GS DSnCI = -3.0 ADSWITCHING CHARACTERISTICS (Note 4)Turn-On Delay Time t 7.2 15d(ON)Rise Time t 12 24r V = -10 V, V = -10 V, GS DSnsI = -1.0 A, R = 6.0 D GTurn-Off Delay Time t 18 36d(OFF)Fall Time t 2.6 6.0fDRAIN-TO-SOURCE CHARACTERISTICSForward Diode Voltage V T = 25°C -0.8 -1.0 VSD V = 0 V JGSI = -1.3 AD T = 125°C 0.7JReverse Recovery Time t 12.8RRnsCharge Time t 10aV = 0 V, d /d = 100 A/s, GS IS tI = -1.3 ASDischarge Time t 2.8bReverse Recovery Time Q 7.4 nCRR
