NTJS4405N ,Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
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NTJS4405N
Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 25 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 30 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, GSV = 20 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 8.0 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 0.65 1.5 VGS(TH) GS DS DNegative Threshold Temperature V /T−2.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 4.5 V, I = 0.6 A 249 350DS(on) mGS DV = 2.7 V, I = 0.2 A 299 400GS DV = 4.5 V, I = 1.2 A 260GS DForward Transconductance g V = 5.0 V, I = 0.5 A 0.5 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 49 60 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 22.4 30OSSV = 10 VDSReverse Transfer Capacitance C 8.0 12RSSTotal Gate Charge Q 0.75 1.5 nCG(TOT)Threshold Gate Charge Q 0.10G(TH)V = 4.5 V, V = 5.0 V, GS DSI = 0.95 ADGate−to−Source Charge Q 0.30 0.50GSGate−to−Drain Charge Q 0.20 0.40GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 6.0 12 nsd(ON)Rise Time t 4.7 8.0rV = 4.5 V, V = 6.0 V, GS DSI = 0.5 A, R = 50 D GTurn−Off Delay Time t 25 35d(OFF)Fall Time t 41 60fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, T = 25°C 0.82 1.20 VSD GS JI = 0.6 AS2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
