NTJS4151P ,Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJS4151PT1G , Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4405N ,Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTJS4405NT1G , Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4G , Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTK3134NT1G , Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
OV9715 , High-Performance Video for Automotive Vision Applications
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OX12PCI840-PQAG , Integrated Parallel Port and PCI interface
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OXCB950 , Integrated High Performance UART Cardbus / 3.3v PCI interface
OXCF950-TQ-B , Single full-duplex asynchronous channel 128-byte deep transmitter / receiver FIFO
NTJS4151P
Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V−20 V(BR)DSSV = 0 V, I = −250 ADrain−to−Source Breakdown Voltage V /T GS D−12 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C−1.0 ADSS JV = −16 V, GSV = 0 VDST = 85°C−5.0JGate−to−Source Leakage Current I V = 0 V, V = ±4.5 V ±1.5 AGSS DS GSV = 0 V, V = ±12 V ±10 mADS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V−0.40−1.2 VGS(TH)V = V , I = −250 ANegative Threshold Temperature V /T GS DS D 4.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = −4.5 V, I = −3.3 A 47 60DS(on) GS D mV = −2.5 V, I = −2.3 A 70 85GS DV = −1.8 V, I = −1.0 A 180 205GS DForward Transconductance g V = −10 V, I = −3.3 A 12 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C 850 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 160OSSV = −10 VDSReverse Transfer Capacitance C 110RSSTotal Gate Charge Q 10 nCG(TOT)V = −4.5 V, V = −10 V, GS DSGate−to−Source Charge Q 1.5GSI = −3.3 ADGate−to−Drain Charge Q 2.8GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 0.85 sd(ON)Rise Time t 1.7rV = −4.5 V, V = −10 V, GS DDI = −1.0 A, R = 6.0 Turn−Off Delay Time t D G 2.7d(OFF)Fall Time t 4.2fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, I = −1.3 A,−0.75−1.2 VSD GS ST = 25°CJnsReverse Recovery Time t 63RRV = 0 V, dI /dt = 100Charge Time T 9.0GS SaA/s, Discharge Time T 54b I = −1.3 ASReverse Recovery Charge Q 0.23 nCRR2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
