NTJD4401N ,Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD ProtectionELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTJS3151P ,Trench Power MOSFET 12 V, 3.3A, Single P-Channel ESD Protected SC-88ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJS3151PT1G , Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS4151P ,Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJS4151PT1G , Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4405N ,Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
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NTJD4401N
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 20 27 V(BR)DSSGS DDrain−to−Source Breakdown Voltage V /T 22 mV/ °C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, V = 16 V 1.0 ADSS GS DSGate−to−Source Leakage Current I V = 0 V, V = ±12 V 10 AGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 0.6 0.92 1.5 VGS(TH) GS DS DGate Threshold Temperature V /T−2.1 mV/ °CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 4.5 V, I = 0.63 A 0.29 0.375 DS(on) GS DV = 2.5 V, I = 0.40 A 0.36 0.445GS DForward Transconductance g V = 4.0 V, I = 0.63 A 2.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 33 46 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 13 22OSSV = 20 VDSReverse Transfer Capacitance C 2.8 5.0RSSTotal Gate Charge Q 1.3 3.0 nCG(TOT)Threshold Gate Charge Q 0.1G(TH)V = 4.5 V, V = 10 V, GS DSI = 0.63 ADGate−to−Source Charge Q 0.2GSGate−to−Drain Charge Q 0.4GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time td 0.083 s(ON)Rise Time tr 0.227V = 4.5 V, V = 10 V, GS DDI = 0.5 A, R = 20 D GTurn−Off Delay Time td 0.786(OFF)Fall Time tf 0.506DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, VT = 25°C 0.76 1.1SD GS JI =0.23 AST = 125°C 0.63JReverse Recovery Time t V = 0 V, dI /dt = 100 A/s, 0.410 sRR GS SI = 0.63 AS2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
