NTJD4152P ,Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD ProtectionELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJD4152PT1G , Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
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NTJD4152P
Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD Protection
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I =ï 250Aï 20 V(BR)DSS GS DZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, V =ï 16 VGS DST = 125°C 1.0 5.0JGateï toï Source Leakage Current I V = 0 V, V = ±4.5 V 0.03 1.0 AGSS DS GSV = 0 V, V = ±12 V 6.0DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage Vï 0.45 1.2 VV = V , ID = ï 250AGS(TH) GS DSDrainï toï Source On Resistance R V =ï 4.5 V, I =ï 0.88 A 215 260DS(on) GS D mV =ï 2.5 V, I =ï 0.71 A 345 500GS DV = ï 1.8 V, I =ï 0.20 A 600 1000GS DForward Transconductance g V =ï 10 V, I =ï 0.88 A 3.0 SFS DS DCHARGES AND CAPACITANCESpFInput Capacitance C 155ISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 25OSSV =ï 20 VDSReverse Transfer Capacitance C 18RSSnCTotal Gate Charge Q 2.2G(TOT)V =ï 4.5 V, V =ï 10 V, GS DSGateï toï Source Charge Q 0.5GSI =ï 0.88 ADGateï toï Drain Charge Q 0.65GDSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 5.8 nsd(ON)Rise Time t 6.5rV =ï 4.5 V, V =ï 10 V, GS DDI =ï 0.5 A, R = 20 D GTurnï Off Delay Time t 13.5d(OFF)Fall Time t 3.5fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°Cï 0.8ï 1.2 VSD JV = 0 V, GSI =ï 0.48 AST = 125°Cï 0.66J3. Pulse Test: pulse width 300s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
