NTJD4105CT1G ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88MAXIMUM RATINGS (T = 25°C unless otherwise noted)JParameter Symbol Value UnitS 1 6 D1 1Drain−to−Sou ..
NTJD4105CT2 ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-882NTJD4105CTYPICAL N−CHANNEL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J1.41.2V = 4.5 V to ..
NTJD4105CT2G ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88• Leading −8.0 V Trench for Low R PerformanceDS(on)• ESD Protected Gate − ESD Rating: Class 1V R TY ..
NTJD4152P ,Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD ProtectionELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJD4152PT1G , Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
NTJD4401N ,Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD ProtectionELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
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OWS4805 ,One - Industry Standard Package
OX12PCI840-PQAG , Integrated Parallel Port and PCI interface
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OXCB950 , Integrated High Performance UART Cardbus / 3.3v PCI interface
NTJD4105C-NTJD4105CT1-NTJD4105CT1G-NTJD4105CT2-NTJD4105CT2G
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Condition Min Typ Max UnitsOFF CHARACTERISTICSDrain−to−Source a o Sou ce V N I =250 A 20 27 V(BR)DSS (BR)DSSDV V =0 =0 V VGS GSBreakdown VoltageP I =−250 A −8.0 −10.5DDrain−to−Source Breakdown a o Sou ce ea do V N 22 mV/ / °C C(BR)DSS (BR)DSSVoltage Temperature Coefficient / TJP −6.0Zero Gate V e o Ga e oltage Drain Current o age a Cu e I N V =0 V, V =16 V 1.0 ADSS DSS GS DST T =25 =25 ° °C CJ JP V =0 V, V =−6.4 V 1.0GS DSGa Gate−to−Source e o Sou ce I N V =±12 V 10 AGS GSS S GSV V =0 =0 V VDS DSLeakage CurrentP V =±8.0 10GSON CHARACTERISTICS (Note 2)Gate Threshold V Ga e es o d o oltage age V N I =250 A 0.6 0.92 1.5 VGS GS(TH) (TH) DV V =V =VGS GS DS DSP I =−250 A −0.45 −0.83 −1.0DGate Threshold Ga e es o d V // N −2.1 −mV/ / °C CGS GS(TH) (TH)Temperature Coefficient TJ P 2.2Drain−to−Source On Resistance a o Sou ce O es s a ce R N V =4.5 V I =0.63 A 0.29 0.375 DS(on) DS(on) GS DP V =−4.5 V, I =−0.57 A 0.22 0.30GS DN V =2.5 V, I =0.40 A 0.36 0.445GS DP V =−2.5 V, I =−0.48 A 0.32 0.46GS DP V =−1.8 V, I =−0.20 A 0.51 0.90GS DForward T o a d ransconductance a sco duc a ce g g N V =4.0 V I =0.63 A 2.0 S SFS FSDS DP V =−4.0 V, I =−0.57 A 2.0DS DCHARGES AND CAPACITANCESInput Capacitance uCaac a ce C C N V =20 V 33 46 pFISS ISSDSP V =−8.0V 160 225DSOutput Capacitance Ou u Ca ac a ce C C N V =20 V 13 22OS OSS SDSf=1 f=1 MH MHz z, V V =0 =0 V VGS GSP V =−8.0 V 38 55DSReverse T e ese ransfer Capacitance ase Caac a ce C C N V =20 V 2.8 5.0RSS RSS DSP V =−8.0 V 28 40DSToa otal Gate Charge GaeC a ge Q Q N V =4.5 V, V =10 V, I =0.7 A 1.3 3.0 nC CG(T G(TOT) OT) GS DS DP V =−4.5 V, V =−5.0 V, I =−0.6 A 2.2 4.0GS DS DThreshold Gate Charge es o d Ga e C a ge Q Q N V =4.5 V, V =10 V, I =0.7 A 0.1G(TH) G(TH) GS DS DP V =−4.5 V, V =−5.0 V, I =−0.6 A 0.1GS DS DGa Gate−to−Source Charge e o Sou ce C a ge Q Q N V =4.5 V, V =10 V, I =0.7 A 0.2GS GS GS DS DP V =−4.5 V, V =−5.0 V, I =−0.6 A 0.5GS DS DGa Gate−to−Drain Charge e o a C a ge Q Q N V =4.5 V, V =10 V, I =0.7 A 0.4GD GD GS DS DP V =−4.5 V, V =−5.0 V, I =−0.6 A 0.5GS DS DSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t N 0.083 s sd(ON)Rise Time t 0.227V V =4.5 V 4.5 V, , V V =10 V 10 V, , r GS GS DD DDI =0.5 A, R , =20 Turn−Off Delay Time t 0.786D D G Gd(OFF)Fall Time t 0.506fTurn−On Delay Time t P 0.013d(ON)Rise Time t 0.023V V =−4.5 V 4.5 V, , V V =−4.0 V 4.0 V, , r GS GS DD DDI =−0.5 A, R =8.0 Turn−Off Delay Time t , 0.050D D G Gd(OFF)Fall Time t 0.036fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode V o a d ode o oltage age V N I =0.23 A 0.76 1.1 VSD SD SV V =0 =0 V V, T T =25 =25° °C CGS GS J JP I =−0.23 A 0.76 1.1SN I =0.23 A 0.63SV V =0 =0 V V, T T =125 =125° °C CGS GS J JP I =−0.23 A 0.63SReverse Recovery T e e se eco e y ime e t s sN V V =0 V 0 V, , I =0.23 A 0.410RR RR SGS GSd /d =90 A/sP I =−0.23 A 0.078IS tS2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
