NTJD2152PT1 ,Trench Small Signal MOSFET 8 V Dual P-Channel, ESD ProtectionELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Ty ..
NTJD2152PT1G ,Trench Small Signal MOSFET 8 V Dual P-Channel, ESD ProtectionMAXIMUM RATINGS (T = 25°C unless otherwise stated)JParameter Symbol Value UnitDrain−to−Source Volta ..
NTJD4001N ,Small Signal MOSFET 30 V, 250 mA, Dual NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTJD4001NT1G ,Small Signal MOSFET 30 V, 250 mA, Dual NMAXIMUM RATINGS (T = 25°C unless otherwise stated)JS 1 6 D1 1Parameter Symbol Value UnitsDrain−to−S ..
NTJD4105C ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Condition Mi ..
NTJD4105CT1 ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-883R DRAIN−TO−SOURCE RESISTANCE ()R DRAIN−TO−SOURCEDS(on), DS(on), I DRAIN CURRENT (AMPS)D,RESISTANC ..
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NTJD2152P-NTJD2152PT1-NTJD2152PT1G
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −8.0 −10.5 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V(BR)DSS/ −6.0 mV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, V = −6.4 V 1.0 ADSS GS DSGate−to−Source Leakage Current I V = 0 V, V = ±8.0 V 10 AGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , ID = −250 A −0.45 −0.83 −1.0 VGS(TH) GS DSGate Threshold Temperature V /T 2.2 mV/ °CGS(TH) JCoefficientDrain−to−Source On Resistance R V = −4.5 V, I = −0.57 A 0.22 0.3 DS(on) () GS DV = −2.5 V, I = −0.48 A 0.32 0.46GS DV = −1.8 V, I = −0.20 A 0.51 0.9GS DForward Transconductance g V = −4.0 V, I = −0.57 A 2.0 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C V = 0 V, f = 1.0 MHz, 160 225 pFISS GSV V = −8.0 80 V VDSOutput Capacitance C 38 55OSSReverse Transfer Capacitance C 28 40RSSTotal Gate Charge Q V = −4.5 V, V = −5.0 V, 2.2 4.0 nCG(TOT) GS DSII = −0.6 06 A ADThreshold Gate Charge Q 0.1G(TH)Gate−to−Source Charge Q 0.5GSGate−to−Drain Charge Q 0.5GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time td V = −4.5 V, V = −4.0 V, 13 ns(ON) GS DDII = −0.5 05 A, R A R = 8.0 80 D GRise Time tr 23Turn−Off Delay Time td 50(OFF)Fall Time tf 36DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, T = 25°C 0.76 1.1 VSD GS JII = −0.23 023 A AST = 125°C 0.63JReverse Recovery Time t V = 0 V, dI /dt = 100 A/s, 78 nsRR GS SI = −0.77 AS2. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
