NTHS4101PT1 ,Power MOSFET 20 V Single P-Channel ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS4101PT1G ,Power MOSFET 20 V Single P-Channel ChipFET™3R DRAIN−TO−SOURCE RESISTANCE ()DS(on), −I DRAIN CURRENT (AMPS)D,−I , LEAKAGE (nA)DSSR DRAIN−TO−SO ..
NTHS4501NT1 , Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package
NTHS4501NT1G , Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package
NTHS5404T1 ,Power MOSFET 20V, 5.2A, N-Channel ChipFET™2REV. AAND8044/D160Single EVB120Min. Footprint80401” Square PCB0–5 –4 –3 –2 –110 10 10 10 10 1 10 1 ..
NTHS5404T1G ,Power MOSFET 20V, 5.2A, N-Channel ChipFET™Maximum ratings are 95C/W for the 1206–8In this example, a 45C/W reduction was achieved withoutve ..
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NTHS4101PT1-NTHS4101PT1G
Power MOSFET 20 V Single P-Channel ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 2) V V = 0 V , I = −250 A −20 V(Br)DSS GS dc D dc dcTemperature Coefficient (Positive)Gate−Body Leakage Current Zero I V = 0 V , V = 8.0 V 100 nAGSS DS dc GS dc dcZero Gate Voltage Drain Current I V = −16 V , V = 0 V −1.0 ADSS DS dc GS dc dcV = −16 V , V = 0 V , −5.0DS dc GS dcT = 85°CJON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = −250 A −0.45 −1.5 VGS(th) DS GS D dc dcStatic Drain−to−Source On−Resistance R V = −4.5 V , I = −4.8 A 21 34 mDS(on) GS dc D dcV = −2.5 V , I = −4.2 A 30 40GS dc D dcV = −1.8 V , I = −1.0 A 42 52GS dc D dcForward Transconductance g V = −5.0 V , I = −4.8 A 15 SFS DS dc D dcDiode Forward Voltage V I = −4.8 A , V = 0 V −0.8 −1.2 VSD S dc GS dcDYNAMIC CHARACTERISTICSInput Capacitance C V = −16 V 2100 pFiss DS dcV V = 0 V VGSOutput Capacitance C 290ossf=10M f = 1.0 MH Hz zTransfer Capacitance C 200 rssSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t V = −16 V 8.0 nsd(on) DD dcRise Time t V = −4.5 V 28r GS dcTurn−Off Delay Time t I = −4.5 A 75d(off) D dcFall Time t R = 2.5 60f GGate Charge Q V = −4.5 V 25 35 nCg GS dcQ I = −4.5 A 4.0gs D dcQ V = −16 V (Note 3) 7.0gd DS dc2. Pulse Test: Pulse Width = 250 s, Duty Cycle = 2%.3. Switching characteristics are independent of operating junction temperatures.
