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NTHS2101PT1-NTHS2101PT1G
Power MOSFET 8 V P-Channel Single ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 2) V V = 0 V , I = −250 A −8.0 V(Br)DSS GS dc D dc dcTemperature Coefficient (Positive)Gate−Body Leakage Current Zero I V = 0 V , V = 8.0 V 100 nAGSS DS dc GS dc dcZero Gate Voltage Drain Current I V = −6.4 V , V = 0 V −1.0 ADSS DS dc GS dc dcV = −6.4 V , V = 0 V , −5.0DS dc GS dcT = 85°CJON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = −250 A −0.45 −1.5 VGS(th) DS GS D dc dcStatic Drain−to−Source On−Resistance R V = −4.5 V , I = −5.4 A 19 25 mDS(on) GS dc D dcV = −2.5 V , I = −4.5 A 25 36GS dc D dcV = −1.8 V , I = −2.0 A 34 48GS dc D dcForward Transconductance g V = −5.0 V , I = −5.2 A 20 SFS DS dc D dcDiode Forward Voltage V I = −1.1 A , V = 0 V −0.62 −1.2 VSD S dc GS dcDYNAMIC CHARACTERISTICInput Capacitance C V = −6.4 V 2400 pFiss DS dcV V = 0 V VGSOutput Capacitance C 550ossff=10M = 1.0 MH Hz zTransfer Capacitance C 420rssSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t V = −6.4 V 7.0 nsd(on) DD dcV V = −4.5 V VGS dcRise Time t 28rII = − = −5 54A .4 AD D dc dcTurn−Off Delay Time t 73d(off)R R = 2.0 = 2.0 (Note 2) (Note 2)G GFall Time t 60fGate Charge Q 15 30 nCGV V = −4.5 V = −4.5 VGS GS d dc cQ 4.0I = −5.4 AGSD D dc dcV = −6.4 VDS dcQ 8.0GDSource−Drain Reverse Recovery Time T I = −1.1 A, di/dt = 100 A/s 90 nsrr F2. Pulse Test: Pulse Width = 250 s, Duty Cycle = 2%.3. Switching characteristics are independent of operating junction temperatures.
