NTHD5905T1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS2101PT1 ,Power MOSFET 8 V P-Channel Single ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS2101PT1G ,Power MOSFET 8 V P-Channel Single ChipFET™• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6making it an Ideal Device for Applicat ..
NTHS4101PT1 ,Power MOSFET 20 V Single P-Channel ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS4101PT1G ,Power MOSFET 20 V Single P-Channel ChipFET™3R DRAIN−TO−SOURCE RESISTANCE ()DS(on), −I DRAIN CURRENT (AMPS)D,−I , LEAKAGE (nA)DSSR DRAIN−TO−SO ..
NTHS4501NT1 , Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7675 , Higher Performance, Feature Rich VGA Sensor to Support Fast Growing EmergingMarkets
OV7725 , high performance, all-digital VGA camera solution
OV7740 , ultra-high sensitivity CMOS image sensor
NTHD5905T1
OBSOLETE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = −250 A−0.45−− VGS(th) DS GS DGate−Body Leakage I V = 0 V, V = 8.0 V−− 100 nAGSS DS GSZero Gate Voltage Drain Current I V = −6.4 V, V = 0 V−−−1.0 ADSSDS GSV = −6.4 V, V = 0 V, −−−5.0DS GST = 85°CJOn−State Drain Current (Note 3) I V −5.0 V, V = −4.5 V−10−− AD(on) DS GSDrain−Source On−State Resistance (Note 3) rV = −4.5 V, I = −3.0 A− 0.075 0.090 DS(on) () GS DV = −2.5 V, I = −2.5 A− 0.110 0.130GS DV = −1.8 V, I = −1.0 A− 0.150 0.180GS DForward Transconductance (Note 3) g V = −5.0 V, I = −3.0 A− 7.0− Sfs DS DDiode Forward Voltage (Note 3) V I = −0.9 A, V = 0 V−−0.8−1.2 VSD S GSDynamic (Note 4)nCTotal Gate Charge Q− 5.5 9.0gV V = −40 4.0 V V, V V = −4.5 V 45 V, DS GSGate−Source Charge Q− 0.5−gsII = = −−3 3.0 A .0 AD DGate−Drain Charge Q− 1.5−gdTurn−On Delay Time t− 10 15 nsd(on)V = −4.0 V, R = 4 Rise Time t DD L− 45 70rII −10 1.0 A, V A V = = −4.5 V 45 V,D D GE GEN NTurn−Off Delay Time t− 30 45d(off)R R = 6 6 G GFall Time t− 10 15fSource−Drain Reverse Recovery Time t I = −0.9 A, di/dt = 100 A/s− 30 60rr F2. Surface Mounted on 1″ x 1″ FR4 Board.3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Guaranteed by design, not subject to production testing.
