NTHD5904T1 ,Power MOSFET Dual N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
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NTHD5904T1
Power MOSFET Dual N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = 250 A 0.6 – – VGS(th) DS GS DGate–Body Leakage I V = 0 V, V = 12 V – – 100 nAGSS DS GSZero Gate Voltage Drain Current I V = 16 V, V = 0 V – – 1.0 ADSS DS GSV = 16 V, V = 0 V, – – 5.0DS GST = 85°CJOn–State Drain Current (Note 3) I V 5.0 V, V = 4.5 V 10 – – AD(on) DS GSDrain–Source On–State Resistance (Note 3) r V = 4.5 V, I = 3.1 A – 0.065 0.075 DS(on) () GS DV = 2.5 V, I = 2.3 A – 0.115 0.143GS DForward Transconductance (Note 3) g V = 10 V, I = 3.1 A – 8.0 – Sfs DS DDiode Forward Voltage (Note 3) V I = 0.9 A, V = 0 V – 0.8 1.2 VSD S GSDynamic (Note 4)Total Gate Charge Q – 4.0 6.0 nCgV V = 10 V 10 V, V V = 4.5 V 45V, DS GSGate–Source Charge Q – 0.6 –gsII = 3.1 A = 3.1 AD DGate–Drain Charge Q – 1.3 –gdTurn–On Delay Time t – 12 18 nsd(on)V = 10 V, R = 10 DD LRise Time t – 35 55rII 1.0 A, V 10A V = 4.5 V =45V,D D GE GEN NTurn–Off Delay Time t – 19 30d(off)R R = 6 6 G GFall Time t – 9.0 15fSource–Drain Reverse Recovery Time t I = 0.9 A, di/dt = 100 A/s – 40 80Frr2. Surface Mounted on 1″ x 1″ FR4 Board.3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Guaranteed by design, not subject to production testing.
