NTHD5904NT1G ,Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™APPLICATION NOTECHARACTERISTICS DESCRIPTIONThe attached SPICE Model describes typical electrical• N ..
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NTHD5904NT1G
Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™
APPLICATION NOTECHARACTERISTICS DESCRIPTIONThe attached SPICE Model describes typical electrical• N–Channel Vertical DMOScharacteristics of the n–channel vertical DMOS. The• Macro–Model (Sub–circuit)sub–circuit model was extracted and optimized over a 25°C• Level 3 MOSto 125°C temperature range under pulse conditions for 0 to• Applicable for both Linear and Switch Mode4.5 volts gate drives. Saturated output impedance model• Applicable over a –55 to 125°C Temperature Rangeaccuracy has been maximized for gate biases near• Models Gate Charge, Transient, and Diode Reverse threshold. A novel gate–to–drain feedback capacitorRecovery Characteristics network is used to model gate charge characteristics whileavoiding convergence problems of switched C model.gdModel parameter values are optimized to provide a best fitto measure electrical data and are not intended as an exactphysical description of a device.D4M2R1M1DBD3G1CGS2SFigure 1. Model Sub–circuitThis document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriatedata sheet of the same number for guaranteed specification limits. Semiconductor Components Industries, LLC, 20011 Publication Order Number:April, 2001 – Rev. 0AND8047/DAND8047/DMODEL EVALUATIONN–CHANNEL DEVICE (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions Typical UnitStaticGate Threshold Voltage V V = V , I = 250 A 1.02 VGS(th) DS GS DOn–State Drain Current (Note 1.) I V 5.0 V, V = 4.5 V 32 AD(on) DS GSDrain–Source On–State Resistance (Note 1.) r V = 4.5 V, I = 3.1 A 0.065 DS(on) GS DV = 2.5 V, I = 2.3 A 0.011GS DForward Transconductance (Note 1.) g V = 10 V, I = 3.1 A 7.0 Sfs DS DDiode Forward Voltage (Note 1.) V I = 0.9 A, V = 0 V 0.8 VSD S GSDynamic (Note 2.)Total Gate Charge Q 3.2gGate–Source Charge Q V = 10 V, V = 4.5 V, I = 3.1 A 0.6 nCgs DS GS DGate–Drain Charge Q 1.3gdTurn–On Delay Time t 11d(on)Rise Time t V = 10 V, R = 10 , I 1.0 A, 14r DD L DTurn–Off Delay Time t V = 4.5 V, R = 6.0 16 nsd(off) GEN GFall Time t 20fSource–Drain Reverse Recovery Time t I = 0.9 A, di/dt = 100 A/s 40rr F1. Pulse test: pulse width 300 s, duty cycle 2%.2. Guaranteed by design, not subject to production testing.Comparison of Model with Measured Data
