NTHD5902T1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD5903T1 ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 Vfeatures the same outline as popular 1206A Figure 2, on the following page. This is sufficient for ..
NTHD5903T1G ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 V2REV. AAND8061/D200Junction–to–Ambient Thermal Resistance(dependent on the pcb size)Min. FootprintT ..
NTHD5904NT1 ,Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD5904NT1G ,Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™APPLICATION NOTECHARACTERISTICS DESCRIPTIONThe attached SPICE Model describes typical electrical• N ..
NTHD5904T1 ,Power MOSFET Dual N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
NTHD5902T1
OBSOLETE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = 250 A 1.0−− VGS(th) DS GS DGate−Body Leakage I V = 0 V, V = 20 V−− 100 nAGSS DS GSZero Gate Voltage Drain Current I V = 24 V, V = 0 V−− 1.0 ADSSDS GSV = 24 V, V = 0 V,−− 5.0DS GST = 85°CJOn−State Drain Current (Note 3) I V 5.0 V, V = 10 V 10−− AD(on) DS GSDrain−Source On−State Resistance (Note 3) rV = 10 V, I = 2.9 A− 0.072 0.085 DS(on) () GS DV = 4.5 V, I = 2.2 A− 0.120 0.143GS DForward Transconductance (Note 3) g V = 15 V, I = 2.9 A− 20− Sfs DS DDiode Forward Voltage (Note 3) V I = 0.9 A, V = 0 V− 0.8 1.2 VSD S GSDynamic (Note 4)Total Gate Charge Q− 5.0 7.5 nCgV V = 15 V 15 V, V V = 10 V 10 V,DS GSGate−Source Charge Q− 0.8−gsI = 2.9 AI = 2.9 AD DGate−Drain Charge Q− 1.0−gdTurn−On Delay Time t− 7.0 11 nsd(on)V = 15 V, R = 15 DD LRise Time t− 12 18rII 10 1.0 A, V A V = 10 V = 10 V,D D GE GEN NTurn−Off Delay Time t− 12 18d(off)R R = 6 6 G GFall Time t− 7.0 11fSource−Drain Reverse Recovery Time t I = 0.9 A, di/dt = 100 A/s− 40 80rr F2. Surface Mounted on 1″ x 1″ FR4 Board.3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Guaranteed by design, not subject to production testing.
