NTHD4P02FT1G ,Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD5902T1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD5903T1 ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 Vfeatures the same outline as popular 1206A Figure 2, on the following page. This is sufficient for ..
NTHD5903T1G ,Power MOSFET Dual P-Channel ChipFET™ 2.1 A, 20 V2REV. AAND8061/D200Junction–to–Ambient Thermal Resistance(dependent on the pcb size)Min. FootprintT ..
NTHD5904NT1 ,Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD5904NT1G ,Power MOSFET 20 V, 3.1 A, N-Channel Dual ChipFET™APPLICATION NOTECHARACTERISTICS DESCRIPTIONThe attached SPICE Model describes typical electrical• N ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
NTHD4P02FT1-NTHD4P02FT1G
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min Typ Max UnitsOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −20 −23 V(BR)DSS GS DZero Gate Voltage Drain Current g I V = −16 V, V = 0 V, T = 25°C −1.0 ADSS DSSDS GS JV = −16 V, V = 0 V, T = 85°C−5.0DS GS JGate−to−Source Leakage Current I V = 0 V, V = ±12 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = −250 A −0.6 −0.75 −1.2 VGS(TH) GS DS DDrain−to−Source On− Resistance R V = −4.5, I = −2.2 A 0.130 0.155 DS(on) DS(on)GS DV = −2.5, I = −1.7 A 0.200 0.240GS DForward Transconductance g V = −10 V, I = −1.7 A 5.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 185 300 pFISSV 0V f 10MHV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 95 150OSSV V =− = −10 10 V VDS DSReverse Transfer Capacitance C 30 50RSSnCTotal Gate Charge Q 3.0 6.0G(TOT)Threshold Gate Charge Q 0.2G(TH)V V = −4.5 V = −4.5 V, , V V = = −10 V −10 V, , GS GS D DS SI = −2.2 ADGate−to−Source Charge Q 0.5GSGate−to−Drain Charge Q 0.9GDSWITCHING CHARACTERISTICS (Note 3)nsTurn−On Delay Time t 7.0 12d(ON)Rise Time t 13 25rV V = = −4.5 V −4.5 V, , V V = −16 V = −16 V, , GS GS DD DDI = −2.2 A, R = 2.5 D GTurn−Off Delay Time t 33 50d(OFF)Fall Time t 27 40fDRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)Forward Diode Voltage V V = 0 V, −0.85 −1.15 VSD GSI = −2.1 ASReverse Recovery Time tRR 32 nsCharge Time ta 10V V = 0 V = 0 V, , II = = −2.1 A , −2.1 A , GS GS S SdI /dt = 100 A/sDischarge Time tb S 22Reverse Recovery Charge QRR 15 nCSCHOTTKY DIODE
