NTHD4102PT1G ,Power MOSFET 20 V, Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD4401PT1 ,Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD4401PT1G ,Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™2NTHD4401PTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J44V = −6 V to −3 V T = 25°CG ..
NTHD4401PT3G ,Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™3R DRAIN−TO−SOURCE RESISTANCE ()R DRAIN−TO−SOURCEDS(on), DS(on), −I DRAIN CURRENT (AMPS)D,RESISTAN ..
NTHD4502N ,Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTHD4502NT1 ,Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™Maximum ratings applied to the device are individual stress limit values (notORDERING INFORMATIONno ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
NTHD4102PT1-NTHD4102PT1G
Power MOSFET 20 V, Dual P-Channel ChipFet™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −20 V(Br)DSS GS DDrain−to−Source Breakdown Voltage V T −15 mV/°C(Br)DSS/ JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C −1.0 ADSS JV V = 0 V = 0 VGS GSV = −16 VDST = 85°C −5.0JGate−to−Source Leakage Current I V = 0 V, V = 8.0 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V I = −250 A −0.45 −1.5 VGS(TH) GS DS, DGate Threshold Temperature Coefficient V T 2.7 mV/°CGS(TH)/ JDrain−to−Source On Resistance R V = −4.5 V, I = −2.9 A 64 80 mDS(ON) () GS DV = −2.5 V, I = −2.2 A 85 110GS DV = −1.8 V, I = −1.0 A 120 170DS DForward Transconductance g V = −10 V, I = −2.9 A 7.0 SFS DS DCHARGES, CAPACITANCES, AND GATE RESISTANCEInput Capacitance C 750 pFISSV V = 0 V = 0 V, , f = 1.0 MHz f = 1.0 MHz,,GS GSOutput Capacitance C V = −16 V 100OSSDS DSReverse Transfer Capacitance C 45RSSTotal Gate Charge Q 7.6 8.6 nCG(TOT)V = −4.5 V, V = −16 V, GS DSGate−to−Source Charge Q 1.3GSI = −2.6 AI = −2.6 AD DGate−to−Drain Charge Q 2.6GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 5.5 10 nsd(ON)Rise Time t 12 25rV V = −4.5 V 4.5 V, , V V = −16 V 16 V,,GS GS DD DDI = −2.6 A, R = 2.0 Turn−Off Delay Time t 32 40D Gd(OFF)Fall Time t 23 35fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, I = −1.1 A −0.8 −1.2 VSD GS SReverse Recovery Time t 20 40 nsRRCharge Time ta 15V V = 0 V = 0 V, , dI dI /dt = 100 A/ /dt = 100 A/s s,,GS GS S SI = 1.0 ASDischarge Time tb 5Reverse Recovery Charge Q 0.01 CRR2. Pulse test: pulse width ≤ 300 s, duty cycle ≤ 2%3. Switching characteristics are independent of operating junction temperatures
