NTHD3102C ,Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET驴ELECTRICAL CHARACTERISTICS (continued) (T = 25°C unless otherwise noted)JParameter Symbol N/P Test ..
NTHD3102CT1G , Power MOSFET Complementary, 20 V, 5.5 A /−4.2 A, ChipFET
NTHD3133PFT1G , Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET™
NTHD4102PT1 ,Power MOSFET 20 V, Dual P-Channel ChipFet™3R DRAIN−TO−SOURCE RESISTANCE ()DS(on), −I DRAIN CURRENT (AMPS)D,−I , LEAKAGE (nA)DSSR DRAIN−TO−SO ..
NTHD4102PT1G ,Power MOSFET 20 V, Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
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OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
OV-7604-C7 , Low Power Clock Oscillator 32.768 kHz
OV7670 , 1/6 inch VGA CameraChip for ultra-thin camera modules
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NTHD3102C
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET驴
ELECTRICAL CHARACTERISTICS (continued) (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions Min Typ Max UnitON CHARACTERISTICS (Note 5)Gate Threshold Voltage V N I = 250 A 0.4 1.2 VGS(TH)DV = VGS DSP I = −250 A −0.4 −1.2DDrain−to−Source On Resistance RN V = 4.5 V , I = 4.4 A 29 45 mDS(on) GS DP V = −4.5 V , I = −3.2 A 64 80GS DN V = 2.5 V , I = 4.1 A 37 50GS DP V = −2.5 V, I = −2.5 A 83 110GS DN V = 1.8 V , I = 1.9 A 48 70GS DP V = −1.8 V, I = −0.6 A 105 150GS DForward Transconductance g N V = 10 V, I = 4.4 A 7.7 SFS DS DP V = −10 V , I = −3.2 A 5.9DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C N V = 10 V 510 pFISSDSP V = −10 V 650DSOutput Capacitance C N V = 10 V 100OSS DSf = 1.0 MHz, V = 0 VGSP V = −10 V 100DSReverse Transfer Capacitance C N V = 10 V 50RSS DSP V = −10 V 50DSTotal Gate Charge Q N V = 4.5 V, V = 10 V, I = 4.4 A 5.8 7.9 nCG(TOT) GS DS DP V = −4.5 V, V = −10 V, I = −3.2 A 6.6 8.9GS DS DThreshold Gate Charge Q N V = 4.5 V, V = 10 V, I = 4.4 A 0.96G(TH)GS DS DP V = −4.5 V, V = −10 V, I = −3.2 A 0.98GS DS DGate−to−Source Charge QN V = 4.5 V, V = 10 V, I = 4.4 A 1.2GS GS DS DP V = −4.5 V, V = −10 V, I = −3.2 A 1.4GS DS DGate−to−Drain Charge Q N V = 4.5 V, V = 10 V, I = 4.4 A 1.56GD GS DS DP V = −4.5 V, V = −10 V, I = −3.2 A 1.64GS DS DSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 7.2 nsd(ON)Rise Time t 15.9rN V = 4.5 V, V = 10 V,GS DDI = 4.4 A, R = 2.5 D GTurn−Off Delay Time t 15.7d(OFF)Fall Time t 4.6fTurn−On Delay Time t 6.4d(ON)Rise Time t 16.9rV = −4.5 V, V = −10 V,GS DDPI = −3.2 A, R = 2.5 D GTurn−Off Delay Time t 16.4d(OFF)Fall Time t 15.0f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.
