NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
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NTHC5513T1-NTHC5513T1G
Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions Min Typ Max UnitOFF CHARACTERISTICS (Note 3)Drain−to−Source Breakdown Voltage V N I = 250 A 20 V(BR)DSS () DV V = 0 V =0VGSP I = −250 A −20DZero Gate Voltage Drain Current I N V = 0 V, V = 16 V 1.0 ADSS GS DSP V = 0 V, V = −16 V −1.0GS DSN V = 0 V, V = 16 V, T = 85 °C 5GS DS JP V = 0 V, V = −16 V, T = 85 °C −5GS DS JGate−to−Source Leakage Current I V = 0 V, V = ±12 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V N I = 250 A 0.6 1.2 VGS() (TH) DV V = V VGS DSP I = −250 A −0.6 −1.2DDrain−to−Source On Resistance R (on) N V = 4.5 V , I = 2.9 A 0.058 0.080DSGS DP V = −4.5 V , I = −2.2 A 0.130 0.155GS D N V = 2.5 V , I = 2.3 A 0.077 0.115GS DP V = −2.5 V, I = −1.7 A 0.200 0.240GS DForward Transconductance g N V = 10 V, I = 2.9A 6.0 SFS DS DP V = −10 V , I = −2.2 A 6.0DS DCHARGES AND CAPACITANCESInput Capacitance C N V = 10 V 180 pFISS DSP V = −10 V 185DSOutput Capacitance C N V = 10 V 80OSS DSf=1M f = 1 MHz, V Hz V = 0 V =0VGSP V = −10 V 95DSReverse Transfer Capacitance C N V = 10 V 25RSSDSP V = −10 V 30DSTotal Gate Charge Q nCN V = 4.5 V, V = 10 V, I = 2.9 A 2.6 4.0G(T() OT) GS DS DP V = −4.5 V, V = −10 V, I = −2.2 A 3.0 6.0GS DS DGate−to−Source Gate Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.6GS GS DS DP V = −4.5 V, V = −10 V, I = −2.2 A 0.5GS DS DGate−to−Drain “Miller” Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.7GD GS DS DP V = −4.5 V, V = −10 V, I = −2.2 A 0.9GS DS D3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%.
