NTGS4111P ,Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTGS4111PT1G , Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
NTGS4141N ,Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTGS5120P ,Power MOSFET, 60V PCh, TSOP6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS5120PT1G , Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6
NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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NTGS4111P
Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A−30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T−17 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current IT = 25°C−1.0 ADSSJV = 0 V, GSV = −24 VDS−100T = 125°CJGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = −250 A−1.0−3.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R mV = −10 V, I = −3.7 A 38 60DS(on) GS DV = −4.5 V, I = −2.7 A 68 110GS DForward Transconductance g V = −10 V, I = −3.7 A 6.0 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 750ISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 140OSSV = −15 VDSReverse Transfer Capacitance C 105RSSTotal Gate Charge Q 15.25 32 nCG(TOT)Threshold Gate Charge Q 0.8G(TH)V = −10 V, V = −15 V, GS DDI = −3.7 ADGate−to−Source Charge Q 2.6GSGate−to−Drain Charge Q 3.4GDSWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)Turn−On Delay Time t 9.0 17 nsd(ON)Rise Time t 9.0 18rV = −10 V, V = −15 V, GS DDI = −1.0 A, R = 6.0 Turn−Off Delay Time t D G 38 85d(OFF)Fall Time t 22 45fSWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)Turn−On Delay Time t 11 20 nsd(ON)Rise Time t 15 28rV = −4.5 V, V = −15 V, GS DDI = −1.0 A, R = 6.0 Turn−Off Delay Time t D G 28 56d(OFF)Fall Time t 22 50fDRAIN − SOURCE DIODE CHARACTERISTICSCharacteristic Symbol Test Condition Min Typ Max UnitForward Diode Voltage V T = 25°C−0.76−1.2 VDSJV = 0 V, GSI = −1.0 AST = 125°C−0.60JReverse Recovery Time t 17 40 nsRRCharge Time t 9.0aV = 0 VGSdI /dt = 100 A/s, I = −1.0 ADischarge Time t S S 8.0bReverse Recovery Charge Q 8.0 nCRR3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
