NTGS3446T1G ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6• Higher Efficiency Extending Battery Life• Logic Level Gate DriveV R TYP I MAX• Diode Exhibits Hig ..
NTGS3455 ,MOSFET -3.5 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3. & 4.)ACharacteristic Symbol ..
NTGS3455T1 ,MOSFET -3.5 Amps, -30 Volts2NTGS3455T120 20V = −10 VGS18T = −55°CJV = −9 VGSV = −6 VGS 1616V = −8 VGS14 T = 25°CJV = −7 VGSV = ..
NTGS3455T1G ,MOSFET -3.5 Amps, -30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value UnitDrain−to−Source Voltage ..
NTGS4111P ,Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTGS4111PT1G , Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3446-NTGS3446T1-NTGS3446T1G
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 0.25 mAdc) 20 − −GS D− 22 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Collector Current I AdcDSS(V = 20 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 85°C) − − 25DS GS JGate−Body Leakage Current (V = ±12 Vdc, V = 0) I − − 100 nAdcGS DS GSS(f)I − − −100GSS(r)ON CHARACTERISTICS (Note 4)Gate Threshold Voltage V VdcGS(th)I = 0.25 mA, V = V 0.6 0.85 1.2D DS GSTemperature Coefficient (Negative) − −2.5 − mV/°CStatic Drain−to−Source On−Resistance R mDS(on)(V = 4.5 Vdc, I = 5.1 Adc) − 36 45GS D(V = 2.5 Vdc, I = 4.4 Adc) − 44 55GS DForward Transconductance (V = 10 Vdc, I = 5.1 Adc) g − 12 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 510 750 pFiss(V = 10 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 200 350ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 60 100rssSWITCHING CHARACTERISTICS (Note 5)Turn−On Delay Time t − 9.0 16 nsd(on)Rise Time t − 12 20r(V (V = = 10 Vdc, I 10 Vdc, I = 1.0 Adc, = 1.0 Adc,DD DD D DV = 4.5 Vdc, R = 6.0 )GS GTurn−Off Delay Time t − 35 60d(off)Fall Time t − 20 35fGate Charge Q − 8.0 15 nCT(V = 10 Vdc, I = 5.1 Adc,DS DQ − 2.0 −gsV V = 4.5 Vdc = 4.5 Vdc) )GS GSQ − 2.0 −gdSOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (Note 4) V VdcSD(I = 1.7 Adc, V = 0 Vdc)− 0.74 1.1S GS(I = 1.7 Adc, V = 0 Vdc, T = 85°C) − 0.66 −S GS JReverse Recovery Time t − 20 − nsrrt − 11 −a(I (I = 1.7 Adc, V =17Adc V = 0 Vdc, = 0 VdcS GSt − 9.0 −di di /dt /dt = 100 A/ 100 A/s) s) bS SReverse Recovery Stored Q − 0.01 − CRRCharge4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.5. Switching characteristics are independent of operating junction temperature.
