NTGS3443T1 ,Power MOSFET 2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit 3Drain−to−Source Voltage ..
NTGS3443T1G ,Power MOSFET 2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3446 ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTGS3446T1 ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitSource 4Drain−to−Source V ..
NTGS3446T1G ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6• Higher Efficiency Extending Battery Life• Logic Level Gate DriveV R TYP I MAX• Diode Exhibits Hig ..
NTGS3455 ,MOSFET -3.5 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3. & 4.)ACharacteristic Symbol ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3443-NTGS3443T1-NTGS3443T1G
Power MOSFET 2 Amps, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = −10 A) −20 − −GS DZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = −20 Vdc, T = 25°C) − − −1.0GS DS J(V = 0 Vdc, V = −20 Vdc, T = 70°C) − − −5.0GS DS JGate−Body Leakage Current I nAdcGSS(V = −12 Vdc, V = 0 Vdc) − − −100GS DSGate−Body Leakage Current I nAdcGSS(V = +12 Vdc, V = 0 Vdc) − − 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 Adc) −0.60 −0.95 −1.50DS GS DStatic Drain−Source On−State Resistance R DS(on)(V = −4.5 Vdc, I = −4.4 Adc) − 0.058 0.065GS D(V = −2.7 Vdc, I = −3.7 Adc) − 0.082 0.090GS D(V = −2.5 Vdc, I = −3.5 Adc) − 0.092 0.100GS DForward Transconductance g mhosFS(V = −10 Vdc, I = −4.4 Adc) − 8.8 −DS DDYNAMIC CHARACTERISTICSInput Capacitance C − 565 − pFiss(V = −5.0 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 320 − pFossf f = 1.0 MHz = 1.0 MHz) )Reverse Transfer Capacitance C − 120 − pFrssSWITCHING CHARACTERISTICSTurn−On Delay Time t − 10 25 nsd(on)Rise Time t − 18 45 nsr( (V V = −20 Vdc, I = −20 Vdc, I = −1.0 Adc, = −1.0 Adc,DD DD D DV = −4.5 Vdc, R = 6.0 )GS gTurn−Off Delay Time t − 30 50 nsd(off)Fall Time t − 31 50 nsfTotal Gate Charge Q − 7.5 15 nCtot(V = −10 Vdc, V = −4.5 Vdc,DS GSGate−Source Charge Q − 1.4 − nCgsII = −4.4 Adc = −4.4 Adc) )D DGate−Drain Charge Q − 2.9 − nCgdBODY−DRAIN DIODE RATINGSDiode Forward On−Voltage (I = −1.7 Adc, V = 0 Vdc) V − −0.83 −1.2 VdcS GS SDReverse Recovery Time (I = −1.7 Adc, dI /dt = 100 A/s) t − 30 − nsS S rr4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.5. Handling precautions to protect against electrostatic discharge is mandatory.
