NTGS3441T1 ,Power MOSFET 1 Amp, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit3Drain−to−Source Voltage ..
NTGS3441T1G ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS1200 8V = 0 V V = 0 V T = 25°CDS GS JCiss900 6QTCrss600 4Ciss Q Qgs gdV = ..
NTGS3443 ,Power MOSFET 2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS8 8V = −5 VGSV = −2.5 V V ≥ = −10 VGS DST = 25°CJ6 6V = −3 VGSV = −4.5 VG ..
NTGS3443T1 ,Power MOSFET 2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit 3Drain−to−Source Voltage ..
NTGS3443T1G ,Power MOSFET 2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3446 ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3441-NTGS3441T1-NTGS3441T1G
Power MOSFET 1 Amp, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = −10 A) −20 − −GS DZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = −20 Vdc, T = 25°C) − − −1.0GS DS J(V = 0 Vdc, V = −20 Vdc, T = 70°C) − − −5.0GS DS JGate−Body Leakage Current I nAdcGSS(V = −8.0 Vdc, V = 0 Vdc) − − −100GS DSGate−Body Leakage Current I nAdcGSS(V = +8.0 Vdc, V = 0 Vdc) − − 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 Adc) −0.45 −1.05 −1.50DS GS DStatic Drain−Source On−State Resistance R DS(on)(V = −4.5 Vdc, I = −3.3 Adc) − 0.069 0.090GS D(V = −2.5 Vdc, I = −2.9 Adc) − 0.117 0.135GS DForward Transconductance g mhosFS(V = −10 Vdc, I = −3.3 Adc) − 6.8 −DS DDYNAMIC CHARACTERISTICSInput Capacitance C − 480 − pFiss(V = −5.0 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 265 − pFossf f = 1.0 MHz = 1.0 MHz) )Reverse Transfer Capacitance C − 100 − pFrssSWITCHING CHARACTERISTICSTurn−On Delay Time t − 13 25 nsd(on)Rise Time t − 23.5 45 nsr( (V V = −20 Vdc, I = −20 Vdc, I = −1.6 Adc, = −1.6 Adc,DD DD D DV = −4.5 Vdc, R = 6.0 )GS gTurn−Off Delay Time t − 27 50 nsd(off)Fall Time t − 24 45 nsfTotal Gate Charge Q − 6.2 14 nCtot(V = −10 Vdc, V = −4.5 Vdc,DS GSGate−Source Charge Q − 1.3 − nCgsII = −3.3 Adc = −3.3 Adc) )DDGate−Drain Charge Q − 2.5 − nCgdBODY−DRAIN DIODE RATINGSDiode Forward On−Voltage (I = −1.6 Adc, V = 0 Vdc) V − −0.88 −1.2 VdcS GS SDDiode Forward On−Voltage (I = −3.3 Adc, V = 0 Vdc) V − −0.98 − VdcS GS SDReverse Recovery Time (I = −1.6 Adc, dI /dt = 100 A/s) t − 30 60 nsS S rr4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.5. Handling precautions to protect against electrostatic discharge is mandatory.
