NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
NTGS3433T1G , MOSFET -3.3 Amps, -12 Volts
NTGS3441 ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3441T1 ,Power MOSFET 1 Amp, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit3Drain−to−Source Voltage ..
NTGS3441T1G ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS1200 8V = 0 V V = 0 V T = 25°CDS GS JCiss900 6QTCrss600 4Ciss Q Qgs gdV = ..
NTGS3443 ,Power MOSFET 2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS8 8V = −5 VGSV = −2.5 V V ≥ = −10 VGS DST = 25°CJ6 6V = −3 VGSV = −4.5 VG ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3433-NTGS3433T1
MOSFET -3.3 Amps, -12 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = −10 A) −12 − −GS DZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = −8 Vdc, T = 25°C) − − −1.0GS DS J(V = 0 Vdc, V = −8 Vdc, T = 70°C) − − −5.0GS DS JGate−Body Leakage Current I nAdcGSS(V = −8.0 Vdc, V = 0 Vdc) − − −100GS DSGate−Body Leakage Current I nAdcGSS(V = +8.0 Vdc, V = 0 Vdc) − − 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 Adc) −0.50 −0.70 −1.50DS GS DStatic Drain−Source On−State Resistance R DS(on)(V = −4.5 Vdc, I = −3.3 Adc) − 0.055 0.075GS D(V = −2.5 Vdc, I = −2.9 Adc) − 0.075 0.095GS DForward Transconductance g mhosFS(V = −10 Vdc, I = −3.3 Adc) − 7.0 −DS DDYNAMIC CHARACTERISTICSTotal Gate Charge Q − 7.0 15 nCtot(V (V = −10 Vdc, V 10 Vd V = −4.5 Vdc, 45VdDS GSGate−Source Charge Q − 2.0 −gsII = −3.3 Adc = −3.3 Adc) )D DGate−Drain Charge Q − 3.5 −gdInput Capacitance C − 550 − pFiss(V (V = −5.0 Vdc, V 50Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 450 −ossf f = 1.0 MHz = 1.0 MHz) )Reverse Transfer Capacitance C − 200 −rssSWITCHING CHARACTERISTICSnsTurn−On Delay Time t − 20 30d(on)Rise Time t − 20 30r(V (V = −10 Vdc, I 10 Vdc, I = −1.0 Adc, 1.0 Adc,DD DD D DV = −4.5 Vdc, R = 6.0 )GS gTurn−Off Delay Time t − 110 120d(off)Fall Time t − 100 115fReverse Recovery Time (I = −1.7 Adc, dl /dt = 100 A/s) t − 30 − nsS S rrBODY−DRAIN DIODE RATINGSDiode Forward On−Voltage (I = −1.7 Adc, V = 0 Vdc) V − −0.80 −1.5 VdcS GS SDDiode Forward On−Voltage (I = −3.3 Adc, V = 0 Vdc) V − −0.90 − VdcS GS SD3. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%.4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge is mandatory.
